Siliziumkarbid-Epitaxialsubstrat und Verfahren zu dessen Herstellung

Details

Veröffentlichungs-Nr.

EP4815701

Anmeldetag

23. März 2026

Veröffentlichung

30. September 2026

Rechtsraum

EP

IPC

H10P14/24, H10P14/20

Abstract

To improve the reliability of a silicon carbide epitaxial substrate. A silicon carbide epitaxial substrate including a silicon carbide substrate and an epitaxial layer formed on an upper surface of the silicon carbide substrate is used. Here, a plurality of surface defects is provided on an upper surface of the epitaxial layer. The plurality of surface defects includes minute surface defects that are defects satisfying L < d/tanθ where a length of the surface defect in plan view is denoted as L, a thickness of the epitaxial layer is denoted as d, and an off-angle of the silicon carbide substrate is denoted as θ. In this case, a density of the minute surface defects is 100 counts/cm² or less.

Anmelder

Firma

Proterial, Ltd.

Land

🇯🇵 Japan

Fachgebiete