Vertikaler Balun für Differenz-Zu-Eintakt-Übergang von Mm-Wellensignalen

EP4819379 7. Oktober 2026

Anmelder: NXP B.V. 🇳🇱

Details

Veröffentlichungs-Nr.
EP4819379
Anmeldetag
24. März 2026
Veröffentlichung
7. Oktober 2026
Rechtsraum
EP
IPC
H01P5/10
Offizieller Volltext

Abstract

A multi-level panel level package substrate is formed with a compact vertical balun for converting between single-ended and differential-ended signals, where the vertical balun includes a first non-phase-shifting conductive balun path element having one or more vertically aligned conductive structures formed in at least two package layers and connected between a first differential-ended signal balun node and a single-ended signal balun node; a second phase-shifting conductive balun path element having a plurality of conductive structures formed in at least two package layers and connected between a second differential-ended signal balun node and the single-ended signal balun node; and a single-ended contact element integrally formed with the single-ended signal balun node at a package layer location where the first non-phase-shifting conductive balun path element is directly, electrically connected to the second phase-shifting conductive balun path element.

Anmelder

Firma
NXP B.V.
Land
🇳🇱 Niederlande
🇳🇱 NXP Semiconductors

Niederländischer Halbleiterhersteller mit Sitz in Eindhoven. Entwickelt Chips und Halbleiterlösungen für Automobiltechnik, Kommunikation, Sicherheit sowie industrielle Anwendungen.

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