Halbleiterbauelement und Elektronisches System damit

Details

Veröffentlichungs-Nr.

EP4819786

Anmeldetag

19. November 2025

Veröffentlichung

7. Oktober 2026

Rechtsraum

EP

IPC

H10B41/27, H10B43/27

Abstract

A semiconductor device according to an embodiment may include a gate stacking structure (120), a channel structure, and a gate contact (172). The gate stacking structure (120) may include a plurality of air gap layers (130g) and a plurality of gate electrodes (130) alternately stacked to on each other. The channel structure may pass through the gate stacking structure (120). The channel structure may include a channel layer (140) and a gate dielectric layer (150). The gate dielectric layer (150) may include a charge storage layer (154) including a plurality of storage portions (154p) spaced apart from each other. The plurality of storage portions (154p) may correspond to the plurality of gate electrodes, respectively. The gate contact (172) may pass through the gate stacking structure (120) that includes the plurality of air gap layers (130g) and the plurality of gate electrodes (130). The gate contact (172) may be electrically connected to a connection gate electrode (130c) of the plurality of gate electrodes (130).

Anmelder

Firma

Samsung Electronics Co., Ltd.

Land

🇰🇷 Südkorea

Fachgebiete