Entfernung von Waferregionen
Anmelder: NXP B.V. 🇳🇱
Details
- Veröffentlichungs-Nr.
- EP4822740
- Anmeldetag
- 10. April 2025
- Veröffentlichung
- 14. Oktober 2026
- Rechtsraum
- EP
- IPC
- H01L21/683
Abstract
A method comprising, providing a plurality of first semiconductor dies on a surface of a carrier in a first region. Providing a second semiconductor die on the carrier in a second region. Etching a trench between each of the semiconductor dies, each trench extends into the carrier to a depth. Mounting a grinding foil on the carrier to attach each semiconductor die to the grinding foil. Back grinding a surface of the carrier to the depth. Applying a carrier foil to the back-grinded surface of the carrier. Either modifying the grinding foil or the carrier foil in a region aligned with the first region or use a de-taping module to press the grinding foil to the carrier foil. Then releasing, the plurality of first semiconductor dies from the grinding foil. The plurality of first semiconductor dies release from the grinding foil on removal of the grinding foil from the carrier.
Anmelder
- Firma
- NXP B.V.
- Land
- 🇳🇱 Niederlande
Niederländischer Halbleiterhersteller mit Sitz in Eindhoven. Entwickelt Chips und Halbleiterlösungen für Automobiltechnik, Kommunikation, Sicherheit sowie industrielle Anwendungen.
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