Halbleitergehäuse mit Vorgehäuse und Vorgehäuse

Details

Veröffentlichungs-Nr.

EP4822742

Anmeldetag

9. April 2025

Veröffentlichung

14. Oktober 2026

Rechtsraum

EP

Abstract

A semiconductor package includes a pre-package, a pre-package carrier on which the pre-package is mounted and an encapsulant embedding the pre-package and the pre-package carrier. The pre-package includes a power transistor chip having a first side and a second side opposite the first side. The power transistor chip is a lateral semiconductor device. A plurality of source load pads and a plurality of drain load pads are arranged at the first side of the power transistor chip. A pre-package body embeds the power transistor chip at least at its first side, the pre-package body comprising a first side facing away from the first side of the power transistor chip. A structured metal layer is disposed over the first side of the pre-package body. The structured metal layer comprises one continuous source load structure and one continuous drain load structure. A pre-package vertical interconnect runs through material of the pre-package body and is configured to connect at least some of the source load pads to the source load structure and at least some of the drain load pads to the drain load structure. The pre-package is mounted on the pre-package carrier with the structured metal layer facing the pre-package carrier.

Anmelder

Firma

Infineon Technologies Austria AG

Land

🇦🇹 Österreich