Mikroelektronikgehäuse mit Hybridverbindung zu einem Substrat zur Ermöglichung der Wiederverwendung

Details

Veröffentlichungs-Nr.

EP4823310

Anmeldetag

30. März 2026

Veröffentlichung

14. Oktober 2026

Rechtsraum

EP

Abstract

A method includes providing a circuit substrate including an active surface including one or more protrusions formed from a first material with a first melt temperature; coating each of the one or more protrusions with a second material having a second melt temperature that is less than the first melt temperature; and pressing a semiconductor device die onto the circuit substrate to form a circuit assembly, where the die includes one or more cavities aligned with the protrusions. Each die is plated with a third material having a third melt temperature that is greater than the second melt temperature. The method includes heating the circuit assembly at a selected temperature that is greater than or equal to the second melt temperature and that is less than the first and third melt temperatures to reflow the second material to form an intermetallic connection between the substrate and the die.

Anmelder

Firma

NXP B.V.

Land

🇳🇱 Niederlande