Speichervorrichtungen mit Stromtorsteuerung

Details

Veröffentlichungs-Nr.

EP4826722

Anmeldetag

26. November 2025

Veröffentlichung

21. Oktober 2026

Rechtsraum

EP

Abstract

A memory device (200) includes a memory cell array (210) including one or more banks, a power gating switch (231) disposed on a power path for transmitting a power supply voltage (VDD, VPP) inside the memory device (200), a power gating controller (232) configured to turn on or off a power gating operation of the power gating switch (231) based on a temperature of the memory device (200,) and a frequency of an access to the memory device (200), and a control logic circuit (240) configured to provide, to the power gating controller (232), temperature information (Temp) indicating the temperature of the memory device (200) and a counting value indicating the frequency of the access, wherein when the power gating operation is turned on, the power gating switch (231) toggles in response to the access to the memory device (200), and when the power gating operation is turned off, the power gating switch (231) remains turned on regardless of the access to the memory device (200).

Anmelder

Firma

Samsung Electronics Co., Ltd.

Land

🇰🇷 Südkorea