Speichervorrichtung und Nichtflüchtige Speichervorrichtung mit mehreren Nand-Strings

Details

Veröffentlichungs-Nr.

EP4826725

Anmeldetag

20. März 2026

Veröffentlichung

21. Oktober 2026

Rechtsraum

EP

IPC

G11C16/26

Abstract

A storage device includes a storage controller configured to output a command instructing reading of data, and a nonvolatile memory device including a plurality of NAND strings corresponding to a plurality of bit lines and a plurality of string selection lines, and configured to select a plurality of first bit lines among the plurality of bit lines based on the command, electrically connect a plurality of first NAND strings corresponding to the plurality of first bit lines among the plurality of NAND strings to the plurality of first bit lines and a common source line, and electrically disconnect a plurality of second NAND strings corresponding to a plurality of second bit lines among the plurality of NAND strings from the plurality of second bit lines and the common source line.

Anmelder

Firma

Samsung Electronics Co., Ltd.

Land

🇰🇷 Südkorea

Fachgebiete