Sputterverfahren zur Erzeugung eines Strahls Geladener Teilchen

Details

Veröffentlichungs-Nr.

EP4827244

Anmeldetag

18. April 2025

Veröffentlichung

21. Oktober 2026

Rechtsraum

EP

Abstract

The invention relates to a sputtering process for generating a charged particles beam (40), whereby an E x B crossed field is applied to a sputtering target (20) in a vacuum environment, wherein the sputtering target (20) includes a hollow tube-shaped sputtering target (22) extending along a longitudinal axis in which a plasma phase is generated, the target having at least one open end (24, 24'). At least over a predetermined length of the hollow tube-shaped sputtering target (22): - an electric field E is generated inside (27) the hollow tube-shaped sputtering target (22), the electric field gradient being uniform in the vicinity of the sputtering target and normal thereto; and - a first magnetic field B is generated inside (27) the hollow tube-shaped sputtering target (22); According to the invention, the first magnetic field B is generated by means of a first magnet arrangement (30) positioned outside the target (20) and configured to uniformly generate, along said predetermined length, a magnetic field gradient of B whose component Bt is orthoradial to the longitudinal axis, whereby a first unidirectional E x B drift is obtained along the longitudinal axis that induces a linear erosion of the inner surface of the sputtering target along the longitudinal axis as well as an unidirectional and anisotropic linear drift motion of charged particles along the longitudinal axis such that a charged particles beam (40) exits at the open end (24) of the target (20). The invention also relates to a corresponding sputtering device and is suitable in sputtering deposition processes but also in other applications, e.g. implantation, isotopic separation, etching and propulsion.

Anmelder

Firmen

Centre National de la Recherche Scientifique
Université de Lorraine
Université d'Orléans

Land

🇫🇷 Frankreich