Halbleiteranordnung mit einer Pufferschicht

Details

Veröffentlichungs-Nr.

EP4827267

Anmeldetag

27. November 2025

Veröffentlichung

21. Oktober 2026

Rechtsraum

EP

Abstract

An example semiconductor device is a SiC semiconductor device, including a buffer layer, a first conductivity type semiconductor layer on a first surface of the buffer layer, a second conductivity type well region in the first conductivity type semiconductor layer, a first conductivity type well region in the second conductivity type well region, a gate electrode adjacent to the second conductivity type well region, a gate insulating layer between the gate electrode and the second conductivity type well region, a first electrode on the first conductivity type well region, and a second electrode on a second surface of the buffer layer, the second surface being opposite the first surface. The buffer layer includes a first buffer layer including a first element homologous to Si, and, in the first buffer layer, the content of the first element is 10 at% to 50 at%.

Anmelder

Firma

Samsung Electronics Co., Ltd

Land

🇰🇷 Südkorea