Halbleiterchip mit Durchkontaktierung

Details

Veröffentlichungs-Nr.

EP4827310

Anmeldetag

13. April 2026

Veröffentlichung

21. Oktober 2026

Rechtsraum

EP

Abstract

A semiconductor chip may include: a chip substrate including a first surface and a second surface opposite to the first surface; a passivation layer on the second surface of the chip substrate; a through via penetrating the chip substrate and the passivation layer; a chip pad on the through via and the passivation layer; and a seed layer between the through via and the chip pad and between the passivation layer and the chip pad. The passivation layer may include an etching region in which the through via is located, and an upper surface of the etching region of the passivation layer may be recessed.

Anmelder

Firma

Samsung Electronics Co., Ltd.

Land

🇰🇷 Südkorea