Draugeliene, Virgina Adolfina

The present invention relates to the work environment adaptation method for buildings and a system for realization the adaptation method that creates a certain effect and analyses levels of a person's performance and happiness taking into account the current work environment in a fixed or mobile workplace. Such systems make it possible to analyse and improve the overall labour efficiency, and in particular the maintenance and extension of the period of valuable human performance, and allow making changes to work environment data to adjust them to an employee's short- and medium-term responses. This system is based on long-term research and makes use of the advances in artificial intelligence (Al) and affective computing systems.

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The invention relates to laser beam apodizators for use in high-energy laser systems with at least one laser or parametric amplification module. The invention also relates to high-energy laser systems and high-energy laser radiation generation methods. It is aimed to form a laser beam of a modified profile in order to achieve the highest possible efficiency of the amplifiers of the laser system and at the same time to ensure low diffraction of the beam when it propagates through the optical elements and in free space inside and outside the laser system. A particular focus is paid to beam propagation through optical elements of a finite diameter in order to minimize the modulation of the beam spatial profile due to diffraction effect on the edges of the active media apertures. A family of functions suitable for laser beam profiles is proposed. The solution allows to increase the efficiency of the laser system of several amplification stages, compared to identical systems in which the Gaussian beam propagates. At the same time, the solution allows to build a laser system of a simpler design and lower price, compared to systems in which the super-Gaussian beam with the flat top is formed.

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The invention relates to the field of solar cells. The two terminal tandem solar cell comprises a multilayer structure composed of two types of photoactive layers, one made of perovskite and the other of silicon, wherein the hole conductivity crystalline silicon emitter (3) is located on electron conductivity crystalline silicon base (2), and electron transport layer (4) is deposited on the silicon emitter and covered with perovskite layer (5), wherein a tunnel junction is formed between the hole conductivity silicon emitter and the electron transport layer. To reduce the number of technological operations and increase the conversion efficiency of the tandem solar cell, the tunnel junction is formed by additional doping with donors the region of the electron transport layer adjacent to the surface of said hole conductivity silicon emitter during the deposition of this layer.