Methode zur Abscheidung von SIO2 Schichten

Details

Veröffentlichungs-Nr.

EP2463404

Aktenzeichen

EP11192787

Anmeldetag

9. Dezember 2011

Veröffentlichung

23. Oktober 2019

Erteilung

23. Oktober 2019

Rechtsraum

EP

IPC

C23C16/40C23C16/455H01L21/02

Abstract

This invention related to method to form silicon dioxide films that have extremely low wet etch rate in HF solution using a thermal CVD process, ALD process or cyclic CVD process in which the silicon precursor is selected from one of: R<1>n R<2>m Si(NR<3>R<4>)<4-n-m>; and, a cyclic silazane of (R<1>R<2>SiNR<3>)<p>, where R<1>is an alkenyl or an aromatic, such as vinyl, allyl, and phenyl; R<2>is selected from H, alkyl with C<1>-C<10>, linear, branched, or cyclic, an alkenyl with C<2>-C<10>linear, branched, or cyclic, and aromatic; R<3>and R<4>are selected from H, alkyl with C<1>-C<10>, linear, branched, or cyclic, an alkenyl with C<2>-C<10>linear, branched, or cyclic, and aromatic, or are joined such that NR<3>R<4>is a cyclic amine; n=1-3, m=0-2; p=3-4.

Anmelder

Firmen

Versum Materials US, LLC
Air Products and Chemicals, Inc.

Land

🇺🇸 USA

Fachgebiete