Hochtemperatur-Atomschichtabscheidung von Siliziumoxiddünnschichten

Details

Veröffentlichungs-Nr.

EP2650399

Aktenzeichen

EP13163586

Anmeldetag

12. April 2013

Veröffentlichung

11. September 2019

Erteilung

11. September 2019

Rechtsraum

EP

IPC

C23C16/40C23C16/455C07F7/10

Abstract

Atomic layer deposition (ALD) process formation of silicon oxide with temperature > 500°C is disclosed. Silicon precursors used have a formula of: I. R<1>R<2>m Si(NR<3>R<4>)<n>X<p> wherein R<1>, R<2>, and R<3>are each independently selected from hydrogen, a linear or branched C<1>to C<10>alkyl group, and a C<6>to C<10>aryl group; R<4>is selected from, a linear or branched C<1>to C<10>alkyl group, and a C<6>to C<10>aryl group, a C<3>to C<10>alkylsilyl group; wherein R<3>and R<4>are linked to form a cyclic ring structure or R<3>and R<4>are not linked to form a cyclic ring structure; X is a halide selected from the group consisting of Cl, Br and I; m is 0 to 3; n is 0 to 2; and p is 0 to 2 and m+n+p = 3; and II R<1>R<2>m Si(OR<3>)<n>(OR<4>)<q>X<p> wherein R<1>and R<2>are each independently selected from hydrogen, a linear or branched C<1>to C<10>alkyl group, and a C<6>to C<10>aryl group; R<3>and R<4>are each independently selected from a linear or branched C<1>to C<10>alkyl group, and a C<6>to C<10>aryl group; wherein R<3>and R<4>are linked to form a cyclic ring structure or R<3>and R<4>are not linked to form a cyclic ring structure; X is a halide atom selected from the group consisting of Cl, Br and I; m is 0 to 3; n is 0 to 2; q is 0 to 2 and p is 0 to 2 and m+n+q+p = 3.

Anmelder

Firmen

Versum Materials US, LLC
AIR PRODUCTS AND CHEMICALS, INC.

Land

🇺🇸 USA

Fachgebiete