Halbleitervorrichtung und Treiberschaltung mit Abfluss- und Isolationsstruktur, die miteinander durch eine Diodenschaltung verbunden sind, und Herstellungsverfahren dafür

Details

Veröffentlichungs-Nr.

EP2680300

Aktenzeichen

EP13173226

Anmeldetag

21. Juni 2013

Veröffentlichung

26. Mai 2021

Erteilung

26. Mai 2021

Rechtsraum

EP

IPC

H01L21/336H01L29/78

Abstract

Embodiments of semiconductor devices (200, 600, 700, 1100, 1300) and driver circuits (110) include a semiconductor substrate (210, 610, 710, 1110, 1310) having a first conductivity type, an isolation structure (including a sinker region (222, 622, 722, 1122, 1322, 1610, 1710) and a buried layer (220, 620, 720, 1120, 1320)), an active device within an area (230, 630, 730, 1130, 1330, 1520, 1620, 1720, 1820) of the substrate contained by the isolation structure, and a diode circuit (160). The buried layer is positioned below the top substrate surface (212, 612, 712, 1112, 1312), and has a second conductivity type. The sinker region extends between the top substrate surface and the buried layer, and has the second conductivity type. The active device includes a drain region (236, 636, 736, 1136, 1336) of the second conductivity type, and the diode circuit is connected between the isolation structure and the drain region. The diode circuit may include one or more Schottky diodes (346, 446, 546, 1245, 1445) and/or PN junction diodes (846, 946, 1046, 1246, 1446, 1447). In further embodiments, the diode circuit may include one or more resistive networks (410, 510, 910, 1010) in series and/or parallel with the Schottky and/or PN diode(s).

Anmelder

Firmen

NXP USA, Inc.
Freescale Semiconductor, Inc.

Land

🇺🇸 USA

Fachgebiete