Feldeffekttransistor und Verfahren dafür
Anmelder: NXP USA, Inc. 🇺🇸
Details
- Veröffentlichungs-Nr.
- EP3460852
- Aktenzeichen
- EP18187562
- Anmeldetag
- 6. August 2018
- Veröffentlichung
- 17. Juni 2020
- Erteilung
- 17. Juni 2020
- Rechtsraum
- EP
- IPC
- H01L29/40H01L29/06H01L29/423H01L29/78H01L21/336
Abstract
A transistor includes a trench formed in a semiconductor substrate with the trench having a first sidewall and a second sidewall. A vertical field plate is formed in the trench and the vertical field plate is located between the first sidewall and the second sidewall. A gate electrode is formed in the trench with a first edge of the gate electrode proximate to the first sidewall and a second edge of the gate electrode proximate to the vertical field plate. A first dielectric material is formed in the trench between the first sidewall and the vertical field plate. A second dielectric material is formed in the trench between the vertical field plate and the second sidewall with the second dielectric material having a dielectric constant lower than that of the first dielectric material.
Anmelder
- Firma
- NXP USA, Inc.
- Land
- 🇺🇸 USA
US-amerikanische Gesellschaft des Halbleiterkonzerns NXP, die Chips und Halbleiterlösungen für Automobiltechnik, Kommunikation und Industrieelektronik entwickelt.
1.545 Patente in unserer Datenbank
Fachgebiete
-
Pomper, Till
NoneToulouse