Bidirektionale Leistungs-Mosfet-Struktur
Anmelder: NXP USA, Inc. 🇺🇸
Details
- Veröffentlichungs-Nr.
- EP3462500
- Aktenzeichen
- EP18167136
- Anmeldetag
- 12. April 2018
- Veröffentlichung
- 11. September 2024
- Erteilung
- 11. September 2024
- Rechtsraum
- EP
- IPC
- H01L29/78H01L21/336H01L29/08
Abstract
A field effect device includes a semiconductor body separating a source and a drain, both source and drain coupled to the semiconductor body. An insulated control gate is located over the semiconductor body between the source and drain and configured to control a conductive channel extending between the source and drain. First and second doped regions such as highly-doped regions are adjacent to the source. The first or second doped region may be a cathode short region electrically coupled to the source. The cathode short region may be used in a bidirectional power MOSFET.
Anmelder
- Firma
- NXP USA, Inc.
- Land
- 🇺🇸 USA
US-amerikanische Gesellschaft des Halbleiterkonzerns NXP, die Chips und Halbleiterlösungen für Automobiltechnik, Kommunikation und Industrieelektronik entwickelt.
1.545 Patente in unserer Datenbank
Fachgebiete
-
Pomper, Till
NoneToulouse