Halbleiterbauelement mit Durchkontaktierung und Verfahren dafür
Anmelder: NXP USA, Inc. 🇺🇸
Details
- Veröffentlichungs-Nr.
- EP4336550
- Aktenzeichen
- EP23195227
- Anmeldetag
- 4. September 2023
- Veröffentlichung
- 13. März 2024
- Rechtsraum
- EP
- IPC
- H01L23/29H01L23/31H01L23/538H01L23/552H01L23/66H01L21/60H01L23/498
Abstract
A method of forming a semiconductor device is provided. The method includes encapsulating with an encapsulant at least a portion of a semiconductor die and a package substrate, the encapsulant including an additive selectively activated by way of a laser. A first opening is formed in the encapsulant, the first opening exposing a predetermined first portion of the package substrate. The additive is activated at the sidewalls of the first opening. A second opening is formed in the encapsulant, the second opening encircling the first opening and exposing a predetermined second portion of the package substrate. The additive is activated at the sidewalls the second opening. A conductive material is plated on the additive activated portions of the encapsulant.
Anmelder
- Firma
- NXP USA, Inc.
- Land
- 🇺🇸 USA
US-amerikanische Gesellschaft des Halbleiterkonzerns NXP, die Chips und Halbleiterlösungen für Automobiltechnik, Kommunikation und Industrieelektronik entwickelt.
1.545 Patente in unserer Datenbank
Fachgebiete
-
Hardingham, Christopher Mark
NXP Semiconductors · Hamburg