Hochdichte 3D-Magnetspeichervorrichtung

Details

Veröffentlichungs-Nr.

EP4503033

Aktenzeichen

EP23189234

Anmeldetag

2. August 2023

Veröffentlichung

28. Januar 2026

Erteilung

28. Januar 2026

Rechtsraum

EP

IPC

H10B61/00G11C11/16G11C11/18G11C19/08

Abstract

This disclosure relates to a 3D magnetic memory device (10). The device comprises a stack (11) with a plurality of dielectric layers (11a) and silicon-based layers (11b) alternatingly arranged one on the other. A magnetic material channel (12) is formed through the stack and extends through each layer of the stack. The channel has a first diameter where it extends through a silicon-based layer and a second diameter where it extends through a dielectric layer. A plurality of pinning sites defined by the layers of the stack is formed in the channel, each pinning site being configured to store one magnetic bit. The device further comprises a first metallic layer (13) arranged on a first end of the channel and on the last layer of the stack, a magnetic tunnel junction (MTJ) (14) arranged on the first metallic layer, and a first electrode (15) arranged on the first metallic layer at a distance to the MTJ. In addition, either the first metallic layer is configured as a spin-orbit-torque (SOT) track, or the device comprises a second metallic layer (16) configured as a SOT track. In the latter case, a second end of the channel and the first layer of the stack are arranged on the second metallic layer.

Anmelder

Firma

Imec VZW

Land

🇧🇪 Belgien

Fachgebiete