Globale Vorspannung in einem Mehrkanaligen Hf-Sender-Empfänger
Anmelder: NXP B.V. 🇳🇱
Details
- Veröffentlichungs-Nr.
- EP4712342
- Anmeldetag
- 11. September 2024
- Veröffentlichung
- 18. März 2026
- Rechtsraum
- EP
Abstract
A multichannel RF transceiver includes a global biasing circuit (102) comprising: a reference current source (306), a reference diode (307), a first current mirror transistor (304) and a first replica impedance (310); and a plurality of second current mirror transistors (305<1-N>), each having a gate connected to a gate of the first current mirror transistor (304). A plurality of RF amplifiers each comprise a second replica impedance (313) connected between a biasing node (314) connected to a drain of a respective one of the plurality of second current mirror transistors (305<1-N>) and a first RF amplifier transistor (315) connected to an RF input (317) and to the biasing node (314). The first and second replica impedances (310, 313) cause a replica reference current (IReplicaref) through the first and second replica impedances (310, 313) to be smaller than a reference current (ICref) from the reference current source (306).
Anmelder
- Firma
- NXP B.V.
- Land
- 🇳🇱 Niederlande
Niederländischer Halbleiterhersteller mit Sitz in Eindhoven. Entwickelt Chips und Halbleiterlösungen für Automobiltechnik, Kommunikation, Sicherheit sowie industrielle Anwendungen.
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Hardingham, Christopher Mark
NXP Semiconductors · Hamburg