Trench-Mosfet aus Siliziumkarbid

Details

Veröffentlichungs-Nr.

EP4716407

Anmeldetag

28. Mai 2025

Veröffentlichung

25. März 2026

Rechtsraum

EP

IPC

(KOBAYASHI YUSUKE et al.)

Abstract

A new design of a silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) and method of manufacturing the MOSFET are disclosed. The SiC MOSFET features a trench formed in SiC layers that includes a buried p-well region near the bottom of the trench that extends along a sidewall of the trench. The SiC MOSFET may also include a p-body and built-in channel on an opposite sides of the trench. The SiC MOSFET configurations may help prevent dielectric breakdown and bipolar degradation in the SiC.

Anmelder

Firma

II-VI Delaware, Inc.

Land

🇺🇸 USA