Tegethoff, Sebastian

The present disclosure a homogenizer (40) which is arranged in the optical axis (A) of a light beam, comprising a housing (42) which is connected at one end for exit of the light beam to a base plate (41) and at the other end where the light beam enters the optical element through to an aspherical lens (43) arranged in an aspherical lens mount (52), the homogenizer (40) comprising a centrally arranged glass rod (45) which is arranged with its longitudinal extension in the axis (A) of the light beam, wherein the glass rod (45) is fixed with a first end in a central opening (41a) of the base plate (41) and with the opposite second end in a mount (48), wherein the mount (48) is arranged form-fitting in the housing (42) so that it can move longitudinally in the housing (42). Another object of the present disclosure relates to a system comprising a homogenizer (40) as described above and a chassis (5) into which the homogenizer (40) is mounted. Another object of the present disclosure relates to a light engine (1) comprising a homogenizer (40) as described above or a system as described above

The present disclosure provides a system for the mixing of two liquids, comprising a first container comprising a dilutant, wherein the first container is connected to a diaphragm pump which is connected to an intermediate container; a second container comprising a concentrate, wherein the second container is connected to a piston pump which is connected to an intermediate container; wherein the intermediate container is connected to a liquid level sensor. Another object of the present disclosure relates to a method for diluting a concentrate, comprising the steps of pumping a dilutant which is stored in a first container with a diaphragm pump into an intermediate container; pumping a concentrate which is stored in a second container with a piston pump into the intermediate container.

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A new design of a silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) and method of manufacturing the MOSFET are disclosed. The SiC MOSFET features a trench formed in SiC layers that includes a buried p-well region near the bottom of the trench that extends along a sidewall of the trench. The SiC MOSFET may also include a p-body and built-in channel on an opposite sides of the trench. The SiC MOSFET configurations may help prevent dielectric breakdown and bipolar degradation in the SiC.

This disclosure provides a microfluidic device comprising a first and a second substrate, at least one of first and second substrate having one or more microfluidic formations; and a coating arranged at least partially between first and second substrate, wherein a facing area between first and second substrate without microfluidic formations comprises a coating detection spot. Another aspect of the present disclosure relates to a method for detecting a coating of a microfluidic device, comprising the steps of providing a first and second substrate, wherein at least one of first and second substrate comprises microfluidic formations; providing a coating at least partially between first and second substrate, wherein a facing area between first and second substrate without microfluidic formations comprises a coating detection spot; bonding of first and second substrate; and visual inspection for the presence of bonding voids in the area between first and second substrate without microfluidic formations comprising a coating detection spot

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