Leistungsverstärkervorrichtung mit Vorspannungsleitender Struktur zwischen Eingang und Ausgang und Sendeplattform mit einer Solchen Vorrichtung

Details

Veröffentlichungs-Nr.

EP4726778

Anmeldetag

10. Oktober 2024

Veröffentlichung

15. April 2026

Rechtsraum

EP

IPC

H01L23/66, H03F1/02, H03F3/191

Abstract

A power amplifier device (130, 230, 330, 430, 430', 530, 530') includes a power transistor die (154, 174, 454, 474), an input side signal lead (140, 141, 240, 241, 440, 441) electrically coupled to an input terminal of the power transistor die and extending beyond an input side (131, 231, 331, 431, 1031) of the device, an output side signal lead (144, 145, 244, 245, 444, 445) electrically coupled to an output terminal of the power transistor die and extending beyond an output side (132, 232, 332, 432, 1032) of the device, and an input-to-output bias-conducting structure (133, 135, 433, 435, 533, 535, 1000, 1100, 1200, 1300) that is not physically directly connected to the input side signal lead or to the output side signal lead. The input-to-output bias-conducting structure includes an input side bias lead (142, 143, 242, 243, 342, 343, 442, 443, 542, 543, 1042, 1242, 1342) coupled to an input portion of the device, an output side bias lead (146, 147, 246, 247, 346, 247, 446, 447, 546, 547, 1046, 1246, 1346) coupled to an output portion of the device, and an interior conductive structure (134, 136, 434, 436, 1034, 1134, 1234, 1334) with a first end connected to the input side bias lead, and a second end connected to the output side bias lead.

Anmelder

Firma

NXP USA, Inc.

Land

🇺🇸 USA