Leistungsverstärker
Anmelder: NXP USA, Inc. 🇺🇸
Details
- Veröffentlichungs-Nr.
- EP4734362
- Anmeldetag
- 24. Oktober 2024
- Veröffentlichung
- 29. April 2026
- Rechtsraum
- EP
Abstract
The disclosure relates to a power amplifier apparatus. A power amplifier apparatus (300) comprises: a power amplifier circuit (310) configured to receive an RF input signal at an RF input (RF<sub>in</sub>) and to generate an RF output signal at an RF output (RF<sub>out</sub>); an adaptive bias circuit (320) comprising a biasing transistor (M3), the biasing transistor (M3) having a common terminal coupled to the RF input (RF<sub>in</sub>) and to a tail current source (I<sub>bias</sub>), and the biasing transistor (M3) further having an input terminal coupled to a DC bias voltage source (dc<sub>bias</sub>); and a rectification booster (330) comprising a current mirror device, wherein a first side of the current mirror device is coupled to an output terminal of the biasing transistor (M3) and wherein a second side of the current mirror device is coupled to the RF input (RF<sub>in</sub>).
Anmelder
- Firma
- NXP USA, Inc.
- Land
- 🇺🇸 USA
US-amerikanische Gesellschaft des Halbleiterkonzerns NXP, die Chips und Halbleiterlösungen für Automobiltechnik, Kommunikation und Industrieelektronik entwickelt.
1.545 Patente in unserer Datenbank
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Hardingham, Christopher Mark
NXP Semiconductors · Hamburg