Hitachi Energy Patente

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An energy storage system (1) comprising a plurality of energy storage units (2, 2n) and comprising one or more protection circuits (3, 3n, 4) enabling bypassing one or more of the energy storage units (2, 2n), wherein at least one of the protection circuits (3, 3n, 4) comprises a first switch (S1, Sn1, Sa) and a first resistor (R1, Rn1, Ra) electrically connected in series and comprises a second switch (S2, Sn2, Sb) electrically connected in series with the first switch (S1, Sn1, Sa) and electrically connected in parallel with the first resistor (R1, Rn1, Ra).

An on-load tap changer (1) comprises a first tap selector (6), a second tap selector (7), a first diverter switch (8) and a second diverter switch (9), a first change-over selector (14) and a second change-over selector (15) and one or more high-ohmic resistances (10, 11), wherein the diverter switches (8, 9) are connected to each other such that the tapped windings (2, 3) are connected in series and the one or more high-ohmic resistances (10, 11) are in an electric connection between at least one of the diverter switches (8, 9) and at least one of the tapped windings (2, 3).

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The present disclosure relates to a method for monitoring a power device. The method comprises obtaining at least one frequency spectrum of at least one physical component of the power device, wherein the at least one frequency spectrum comprises at least one eigenfrequency of the at least one physical component of the power device; measuring, using at least one sensor, a vibroacoustic signal of the power device; and determining a signal contribution of the at least one physical component of the power device to the vibroacoustic signal based on the obtained at least one frequency spectrum. The present disclosure also relates to a respective monitoring device and a system comprising at least one sensor and a monitoring device.

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A silicon carbide power device (100) having a low on-resistance R_on and a method for manufacturing the same are provided. The silicon carbide power device (100) comprises a first conductivity-type substrate (20), a plurality of silicon carbide layer stacks (30), a continuous insulating layer (40) and a gate electrode layer (45). Each silicon carbide layer stack (30) comprises the following layers stacked on the substrate (20): a first conductivity-type drain layer (35), a second conductivity-type channel layer (37) and a first conductivity-type source layer (36). A plurality of first insulating layer portions (42) laterally cover and surround at least the drain layer (35) and the channel layer (37) of each silicon carbide layer stack (30). Each point of each channel layer (37) is laterally sandwiched between two opposing portions of the gate electrode layer (45), wherein the two opposing portions have a distance (d) of less than 2 µm along a straight line extending through that point of that channel layer (37).

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The invention relates to an interrupter unit (10) for a gas-insulated high or medium voltage device comprising a first arcing contact (12) and a second arcing contact (14), wherein at least one of the arcing contacts (12,14) is axially movable along a switching axis (16), a heating channel (18) for guiding an arc extinguishing gas from a heating volume (20) to an arcing region (22) formed between the first arcing contact (12) and the second arcing contact (14), wherein the interrupter unit (10) comprises in a transition region (24) of the heating volume (20) to the heating channel (18) a flow guiding element (26), wherein a cross section of the flow guiding element (26) along a plane comprising the switching axis (16) comprises a closed shape, and wherein an aspect ratio of a convex hull (44) of the closed shape is in between 1:3 to 3:1.Furthermore, the invention relates to a gas-insulated high or medium voltage device comprising the above interrupter unit (10) and further an arc extinguishing gas.

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A transformer comprises: - a core (101), - a winding (102, 103) wound around a winding axis (105) extending along the core (101), - an eddy losses reducer (200), the eddy losses reducer (100) being arranged at an axial end (106) of the winding (102, 103) and comprising a non-ferromagnetic main body (201) and a ferro-magnetic layer (202) surrounding the main body (201).

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The semiconductor device (100) comprises a semiconductor body (10) with a top side (11) and a bottom side (19). A first main electrode (2) is arranged on the top side and a second main electrode (3) is arranged on the bottom side. The semiconductor device comprises a gate electrode (3) and at least two trenches, namely a first-type trench (51) and a second-type trench (52). The semiconductor body comprises a drift region (14) arranged vertically between the top side and the bottom side and at least two base regions (13a, 13b) each arranged vertically between the drift region and the top side. The semiconductor body further comprises an injection region (12) adjoining the first base region. The first main electrode is in electrical contact with the injection region. The gate electrode extends into the first-type trench. The second-type trench is free of the gate electrode. The second-type trench extends deeper into the semiconductor body than the first-type trench.

A dielectric heating method for moisture extraction from an active part (10) of a transformer (1) is provided. The method comprises a step of configuring a system including at least one an apparatus (2) configured to generate electric fields alternating at radio frequencies, wherein the electric fields penetrate at least part of regions between freely selectable electrodes (3). The method further comprises a step of operating the at least one apparatus (2) for drying at least one moist region (7) of the active part (10) of the transformer (1), wherein the at least one moist region (7) is located at least partially between the freely selectable electrodes (3), so that the at least one moist region (7) is exposed to the generated alternating electric fields, resulting in heat generation within the at least one moist region (7).

A transformer core, comprising a first yoke, a second yoke, a column (6) having a column main axis (8) and extending between the first yoke and the second yoke, and an elongate clamping structure (10) comprising an elongate rigid member (12) having a rigid member main axis (14) is provided. The column (6) includes an elongate opening (16) having an opening main axis (18) which is oriented transversal with respect to the column main axis (8). The rigid member (12) is positioned within the elongate opening (16) such that the rigid member main axis (14) is oriented parallel to the opening main axis (18).

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