LX Semicon

A heat dissipation substrate for a power semiconductor module according to an embodiment may include an insulating substrate; a bonding metal layer disposed on the insulating substrate; a diffusion metal layer disposed on the bonding metal layer; and a metal plate disposed on the diffusion metal layer, wherein at least one of the bonding metal layer and the diffusion metal layer has a uniform thickness and/or a constant thermal expansion coefficient in a direction parallel to the surface of the insulating substrate (210).

A low dropout voltage regulator according to one aspect of the present invention with improved transient response performance includes a flipped voltage follower (FVF) circuit including a control transistor configured to regulate an output voltage at an output node and a pass transistor configured to supply a load current to the output node, a cascode transistor connected to the control transistor to reduce output impedance of the FVF circuit, an amplifier configured to amplify a difference between a feedback voltage generated based on the output voltage and a reference voltage and output the amplified difference to the control transistor, and a first capacitor configured to separate a first pole formed at a gate terminal of the pass transistor from a second pole formed at the output node in a frequency band.

An embodiment relates to a strain control device of a semiconductor package, a semiconductor package including the strain control device, and a semiconductor module including the semiconductor package. A strain control device of a semiconductor package according to an embodiment may include a body, a plurality of spaced apart first connection members disposed in a first region under the body, and a conductive paste layer disposed in a second region under the body.

A sensing circuit and a display device include: a first switch (SW1) connected between a first reference voltage line to which a first reference voltage (Vref1) is applied and each of a plurality of sensing lines (SL), a sample and hold part including a first sample and hold part (S/H_1) configured to sample a voltage supplied through a sensing line connected to each of a plurality of first sensing channels and a second sample and hold part (S/H_2) configured to sample a voltage supplied through a sensing line connected to at least one second sensing channel, an amplifier (AMP) configured to receive the sampled voltage from the sample and hold part and amplify the sampled voltage, and an analog-digital -AD- converter (ADC) configured to convert the amplified voltage into digital data and generate sensing data, wherein the second sample and hold part is selectively activated according to a mode control signal (cm1, cmb1, cm2, cmb2).

The embodiment relates to a heat flow control device of a semiconductor package, a semiconductor package including the heat flow control device, and a semiconductor module including the semiconductor package. The heat flow control device according to the embodiment may include a heat flow control body and a heat flow control layer disposed on a side of the heat flow control body, and the heat flow control layer may include a plating layer. The heat flow control layer may include a first heat flow control layer and a second heat flow control layer sequentially disposed on a side of the heat flow control body.

The embodiments relate to a vapor chamber for a semiconductor package module, a semiconductor package module including the same, and a power conversion device. A vapor chamber for a semiconductor package module according to an embodiment may include a lower metal plate, a middle metal plate, and an upper metal plate, which are disposed sequentially. A hollow structure may be disposed within the middle metal plate. And the lower metal plate may include a first plate, a second plate, and a third plate, which are disposed sequentially. And a thermal expansion coefficient of the second plate may be less than a thermal expansion coefficient of the first plate or the third plate.

A vapor chamber for a semiconductor package module according to an embodiment may include a lower metal plate, a hollow structure, and an upper metal plate that are sequentially disposed. The lower metal plate may include a first plate, a second plate, and a third plate that are sequentially disposed. A thermal expansion coefficient of the second plate may be less than the thermal expansion coefficient of the first plate or the third plate.

A temperature sensor module and a temperature compensation method thereof according to embodiments of the present disclosure are disclosed. The temperature sensor module includes a temperature sensor configured to output a voltage value corresponding to a sensed temperature; a control circuit configured to calculate a first compensation value based on a code value for the voltage value using reference code values at a first temperature and a second temperature higher than the first temperature, and calculate a second compensation value using an average trend line determined as an average value for each temperature in a first temperature interval equal to or lower than the first temperature and a second temperature interval equal to or higher than the second temperature; a 1st compensation circuit configured to apply the first compensation value to the code value to generate a first-stage compensated first code value; and a 2nd compensation circuit configured to apply the second compensation value to the generated first code value to generate a second-stage compensated second code value.

A touch display driving device according to an aspect of the disclosure capable of maintaining a touch report rate at a constant level in a variable refresh rate mode in which a display refresh rate varies includes: a timing controller that generates a first touch synchronization signal including a first touch scan period and a display driving period when operating in a default mode in which a display refresh rate is a first frequency, and a second touch synchronization signal including a first touch scan period, a display driving period, a second touch scan period, and a dummy blank period when operating in a variable refresh rate mode in which the display refresh rate decreases from the first frequency to a second frequency; a touch driver that performs a touch scan during the first and second touch scan periods to generate touch raw data; and a touch micro controller unit that generates touch coordinates based on the touch raw data and reports the generated touch coordinates according to the touch report rate.

A method of controlling an apparatus connectable to at least two different devices through different interfaces according to one embodiment of the present disclosure includes receiving a first clock signal from a system through a first clock line that is unidirectional, transmitting and receiving first data to and from the system through a first data line that is bidirectional, transmitting the first clock signal to one or more target devices through a second clock line that is unidirectional, transmitting and receiving second data to and from the one or more target devices through a second data line that is bidirectional, and determining, based on a specific condition, whether to transmit the first data to the one or more target devices or to transmit the second data to the system.