LX Semicon

A touch driving device, a display device, and a touch driving method thereof are disclosed. The touch driving device includes: a sensing circuit including a plurality of multiplexers connected to a plurality of sensing lines; and a touch controller configured to operate in an active mode and an idle mode, calculate touch sensing coordinates by receiving output signals of the multiplexers in the active mode, and detect a valid touch signal in the idle mode. The touch controller is configured to output a first control signal for receiving the output signals of the multiplexers one time within a first set time in the idle mode to the multiplexers, and output a second control signal for repeatedly receiving output signals of the multiplexers at a second set time interval in a self-generation interval of the idle mode after the first set time to the multiplexers.

A touch driving device and a touch driving method thereof are disclosed. The touch driving device includes a sensing circuit including a plurality of multiplexers connected to a plurality of sensing lines; and a touch controller configured to receive an output signal of the sensing circuit and to calculate touch sensing coordinates, wherein the touch controller is configured to transmit a mode switching command for switching to an active mode to a timing controller when a valid touch signal is detected in an idle mode, and to operate in a full sensing mode to calculate touch sensing coordinates by receiving output signals from the plurality of multiplexers until the operation in the active mode starts.

An embodiment of the present invention provides a pixel array comprising: a plurality of pixels, wherein each of the plurality of pixels comprises: a substrate including an avalanche amplification region and having a first surface on which light from the outside is incident; and a plasmonic pattern formed on the first surface of the substrate, wherein the plasmonic pattern includes one or more holes.

A heat dissipation substrate vapor chamber according to an embodiment may include a frame part, a wick structure disposed inside the frame part; and a tube disposed on a side of the frame part. And the tube may include a first tube and a second tube.

A method of controlling a display apparatus includes receiving image data (S1210) from an external device, detecting temperature information through a temperature sensor in the display apparatus (S1220), detecting frame rate information from a driver in the display apparatus (S1230), calculating a first gain (S1240) based on the detected temperature information to be applied to a pixel value of the received image data, and calculating a second gain (S1250) based on the detected frame rate information to be applied to the pixel value of the received image data.

The embodiments relate to a vapor chamber for a semiconductor package module, a semiconductor package module including the same, and a power conversion device. A vapor chamber for a semiconductor package module according to an embodiment may include a lower metal plate, a middle metal plate, and an upper metal plate, which are disposed sequentially. A hollow structure may be disposed within the middle metal plate. And the lower metal plate may include a first plate, a second plate, and a third plate, which are disposed sequentially. And a thermal expansion coefficient of the second plate may be less than a thermal expansion coefficient of the first plate or the third plate.

A low dropout voltage regulator according to one aspect of the present invention with improved transient response performance includes a flipped voltage follower (FVF) circuit including a control transistor configured to regulate an output voltage at an output node and a pass transistor configured to supply a load current to the output node, a cascode transistor connected to the control transistor to reduce output impedance of the FVF circuit, an amplifier configured to amplify a difference between a feedback voltage generated based on the output voltage and a reference voltage and output the amplified difference to the control transistor, and a first capacitor configured to separate a first pole formed at a gate terminal of the pass transistor from a second pole formed at the output node in a frequency band.

An embodiment relates to a strain control device of a semiconductor package, a semiconductor package including the strain control device, and a semiconductor module including the semiconductor package. A strain control device of a semiconductor package according to an embodiment may include a body, a plurality of spaced apart first connection members disposed in a first region under the body, and a conductive paste layer disposed in a second region under the body.

A sensing circuit and a display device include: a first switch (SW1) connected between a first reference voltage line to which a first reference voltage (Vref1) is applied and each of a plurality of sensing lines (SL), a sample and hold part including a first sample and hold part (S/H_1) configured to sample a voltage supplied through a sensing line connected to each of a plurality of first sensing channels and a second sample and hold part (S/H_2) configured to sample a voltage supplied through a sensing line connected to at least one second sensing channel, an amplifier (AMP) configured to receive the sampled voltage from the sample and hold part and amplify the sampled voltage, and an analog-digital -AD- converter (ADC) configured to convert the amplified voltage into digital data and generate sensing data, wherein the second sample and hold part is selectively activated according to a mode control signal (cm1, cmb1, cm2, cmb2).

The embodiment relates to a heat flow control device of a semiconductor package, a semiconductor package including the heat flow control device, and a semiconductor module including the semiconductor package. The heat flow control device according to the embodiment may include a heat flow control body and a heat flow control layer disposed on a side of the heat flow control body, and the heat flow control layer may include a plating layer. The heat flow control layer may include a first heat flow control layer and a second heat flow control layer sequentially disposed on a side of the heat flow control body.