Struktur und Verfahren zur Heilung des Tunneldielektrikums von nichtflüchtigen Speicherzellen

Details

Veröffentlichungs-Nr.

EP2620945

Aktenzeichen

EP13151698

Anmeldetag

17. Januar 2013

Veröffentlichung

13. März 2019

Erteilung

13. März 2019

Rechtsraum

EP

IPC

G11C16/34G11C16/04H01L29/792// H01L21/28H01L21/3105

Abstract

A semiconductor device comprises an array (12) of memory cells (18). Each of the memory cells includes a tunnel dielectric (26), a well region including a first current electrode (28) and a second current electrode (30), and a control gate (20). The first and second current electrodes are adjacent one side of the tunnel dielectric (26) and the control gate is adjacent another side of the tunnel dielectric. A controller (16) is coupled to the memory cells (18). The controller (16) includes logic to determine when to perform a healing process in the tunnel dielectric (26) of the memory cells (18), and to apply a first voltage to the first current electrode (28) of the memory cells (18) during the healing process to remove trapped electrons and holes from the tunnel dielectric (26).

Anmelder

Firmen

NXP USA, Inc.
Freescale Semiconductor, Inc.

Land

🇺🇸 USA

Fachgebiete