Beijing NAURA Microelectronics Equipment Patente

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The present disclosure provides a load lock, semiconductor process equipment, and a wafer calibration method. The load lock includes: a chamber body, a first carrier plate, a second carrier plate, a driving mechanism, and a stop member. The first carrier plate and the second carrier plate are oppositely arranged inside the chamber body, and the first carrier plate and the second carrier plate are configured to carry wafers. The driving mechanism is connected to the second carrier plate and is configured to drive the second carrier plate to move toward or away from the first carrier plate. During a process in which the second carrier plate moves toward the first carrier plate, the first carrier plate and the second carrier plate are configured to clamp a wafer to a calibration position. The present disclosure may effectively improve wafer transfer efficiency.

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The present disclosure provides a method for forming a magnetron, a magnetron, and a magnetron sputtering device. The forming method includes: obtaining, according to magnetic pole arrangement of the magnetron, horizontal magnetic field intensities of respective points on a magnetic arc line of the magnetron at any radius on a surface of a target material; obtaining, according to the horizontal magnetic field intensities of the respective points on the magnetic arc line at any radius on the surface of the target material and a relationship between the horizontal magnetic field intensities and corrosion probabilities of the target material, a corrosion probability at any radius on the surface of the target material; and determining, according to corrosion probabilities at a plurality of radii on the surface of the target material, the magnetic pole arrangement of the magnetron, such that it is unnecessary to perform magnetron sputtering experiments by using the target material to obtain corrosion data on the surface of the target material, thereby reducing design costs of the magnetron and shortening a design cycle of the magnetron.

There are provided a vertical heat treatment apparatus and a conveying device therefor. The conveying device includes a main body, a transmission belt mechanism (400), and a stop mechanism (500), and the transmission belt mechanism (400) is used for transmission between a driving part and a driven part of the main body, and includes a transmission belt (401); the stop mechanism (500) includes a stop portion and an engagement assembly, the stop portion is fixedly connected to the driven part, and the engagement assembly includes a stop member, and abuts against the transmission belt (401) to disengage the stop member from the stop portion; when the transmission belt (401) breaks, the engagement assembly disengages from the transmission belt (401), and the stop member is in limit fit with the stop portion to stop the driven part from rotating. A stopping process of the conveying device does not need a detection device for signal detection, and does not need signal control for achieving stopping, so that reliability of the stopping process is improved, and cost of the conveying device is reduced.

The present disclosure provides a process chamber, an upper electrode device thereof, and a semiconductor process equipment. The upper electrode device includes a radio frequency coil and a variable capacitor, where the radio frequency coil is configured to be wound outside a shielding cylinder of the process chamber, and the shielding cylinder is sleeved outside a plasma generation chamber of the process chamber; the variable capacitor is connected in series with the radio frequency coil, and the variable capacitor is configured to be adjusted to different capacitance values in an ignition stage and a reaction stage of the process chamber. The above solution can take into consideration both solving difficult ignition and bombardment of a dielectric window by plasma, and can also mitigate a problem that abnormal discharge is easily caused when the radio frequency coil adopts a lifting structure.

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There are provided a furnace door driving device and a semiconductor heat treatment apparatus. The furnace door driving device includes a connecting disk (1), a limiting assembly (2), a stop assembly (3), and a driving source (4); the driving source (4) is configured to drive the connecting disk (1) to rotate around an axis of the connecting disk (1); the connecting disk (1) is connected to a furnace door (02) for driving the furnace door (02) to rotate; the connecting disk (1) is provided with a limiting part (13) and a stop part (14); and the limiting assembly (2) is configured to be in limiting fit with the limiting part (13) when the connecting disk (1) rotates to a preset limit position, so as to stop the connecting disk (1) from rotating continuously in an original rotation direction; and the stop assembly (3) is configured to be in stop fit with the stop part (14) when the limiting assembly (2) is in limiting fit with the limiting part (13), so as to prevent the connecting disk (1) from rotating in a direction opposite to the original rotation direction. Thus, reverse rotation of the furnace door (02) is prevented, and severe vibration of the connecting disk (1) caused by repeated limiting fit between the connecting disk (1) and the limiting assembly (2) is avoided, thereby avoiding damage to the furnace door (02) caused by excessive vibration of the furnace door (02).

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The present disclosure provides a semiconductor process apparatus and an ignition chamber thereof. The ignition chamber includes a chamber body and a delivery pipeline, the chamber body includes an inner wall of a combustion chamber and an outer wall of the combustion chamber surrounding the inner wall of the combustion chamber, a diluent gas channel is formed between the inner wall of the combustion chamber and the outer wall of the combustion chamber, the outer wall of the combustion chamber is connected to a diluent gas pipeline communicating with the diluent gas channel, the inner wall of the combustion chamber is connected to a combustible gas pipeline and a combustion-supporting gas pipeline, and the combustible gas pipeline and the combustion-supporting gas pipeline both communicate with an interior of the combustion chamber; and the delivery pipeline is configured to be connected to a process chamber of the semiconductor process apparatus, the delivery pipeline is connected to the outer wall of the combustion chamber and communicates with the diluent gas channel, and the inner wall of the combustion chamber is provided with an outlet port, which communicates the interior of the combustion chamber with an interior of the delivery pipeline. A combustible gas and a combustion-supporting gas react in the combustion chamber to generate a reaction product. A diluent gas can be heated by heat generated during reaction, so that a temperature of the heated diluent gas is higher than a dew point temperature of the reaction product, which can prevent the reaction product from condensing and avoid a problem of excessive particles.

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The present disclosure provides an auxiliary temperature-control device for a semiconductor process chamber and a semiconductor process chamber. The auxiliary temperature-control device includes a heat conduction assembly, which is configured to be fixedly connected to the semiconductor process chamber for heat exchange with a process kit in the semiconductor process chamber; a cooling channel, which is disposed in the heat conduction assembly, and is configured to introduce a cooling fluid to cool the heat conduction assembly; and a heating assembly, which is disposed in the heat conduction assembly, and is configured to heat the heat conduction assembly. In the auxiliary temperature-control device provided herein, by providing the heat conduction assembly and disposing the cooling channel and the heating assembly in the heat conduction assembly, a temperature of the heat conduction assembly can be adjusted with the cooling channel and the heating assembly, and heat exchange can be performed between the heat conduction assembly and the process kit to adjust a temperature of the process kit, so that the temperature of the process kit can be prevented from being too high or too low to affect wafers, which can improve wafer product quality.

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