LONGi Green Energy Technology

The present application provides a solar cell and a photovoltaic module, and belongs to the technical field of solar cells. The solar cell includes a semiconductor substrate, where the semiconductor substrate has a first surface and a second surface that are opposite to each other and a plurality of side surfaces adjacently connected between the first surface and the second surface; and a passivated contact structure, at least located on a part of the first surface of the semiconductor substrate. The passivated contact structure includes an interface passivation layer and a first doped semiconductor layer that are sequentially stacked. In a direction from the first surface to the second surface, respective side surface of the plurality of side surfaces includes a first region and a second region that are sequentially adjacent. The first region protrudes in a direction away from the respective side surface relative to the second region. The first doped semiconductor layer is further located on a surface of the first region. A part of the first doped semiconductor layer located in the first region and another part of the first doped semiconductor layer located on the first surface are integrally continuous.

The present application discloses a back contact solar cell and a photovoltaic module, and relates to the field of photovoltaic technologies, to cause a first dielectric passivation layer to have a relatively high field passivation effect and a relatively high chemical passivation effect on a first doped semiconductor part, and reduce field passivation impact of a second dielectric passivation layer on a second doped semiconductor part. The back contact solar cell includes a semiconductor substrate, a first doped semiconductor part, a second doped semiconductor part, a first dielectric passivation layer, and a second dielectric passivation layer. Each of the first dielectric passivation layer and the second dielectric passivation layer includes a first passivation sub-layer having a field passivation function. A conductivity type of the first doped semiconductor part is opposite to that of fixed charges of the first passivation sub-layer. Each of the first dielectric passivation layer and the second dielectric passivation layer further includes a second passivation sub-layer having a chemical passivation function.

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