Seoul Viosys Co., Ltd. Patente

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A red light emitting apparatus according to an exemplary embodiment of the present disclosure includes a first conductivity type semiconductor layer; an active region including a barrier layer and a well layer; a strain control layer disposed between the first conductivity type semiconductor layer and the active region; a superlattice layer disposed between the strain control layer and the active region; a second conductivity type semiconductor layer disposed on the active region; and an electron blocking layer disposed between the active region and the second conductivity type semiconductor layer, in which the first conductivity type semiconductor layer and the well layer are expressed by the following formula (1), and an index value P5 representing a band gap of the well layer and an index value P1 representing a band gap of the first conductivity type semiconductor layer satisfy the following equation 1: (Formula 1) A<x>B<y>C<z>D<(1-x-y-z)> (where A is an element selected from Al, In, and Ga, B is an element selected from Al, In, and Ga, C is an element selected from Al, In, and Ga, D is nitrogen, A, B, and C are different elements from one another, x+y+z=0.5, and 0≤x, y, z≤0.5); and αx + βy + γz P 5 − αx + βy + γz P 1 < 0 <img class="EMIRef" id="33b6d9de-83da-49e5-b74d-9351044a24da-ia01" /> (where α, β, and γ represent band gaps of AD, BD, and CD, respectively).

A light emitting module includes at least one light emitting device, wherein the light emitting device includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, an active layer interposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and an electron blocking layer disposed between the active layer and the second conductivity type semiconductor layer, and the electron blocking layer includes at least one shading region having a lower thickness than an adjacent region.

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A light emitting device includes a semiconductor layer, an insulation layer, a first electrode, and a second electrode. The semiconductor layer may include a first window layer doped with a first dopant, a second window layer doped with a second dopant, and an active layer disposed between the first window layer and the second window layer. The insulation layer may cover the semiconductor layer and may include an opening exposing a region of at least a window layer of the first window layer or the second window layer. The first electrode may be electrically connected to the first window layer. The second electrode may be electrically connected to the second window layer. The first window layer may protrude in a direction in which the first electrode is disposed and may include an electrode placement region in which the first electrode is disposed. At least a region of the electrode placement region may have an acute angle defined between upper and side surfaces thereof.

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The disclosed technology discloses a light emitting device, which includes a first window layer doped with a first conductivity type dopant, a second window layer doped with a second conductivity type dopant, and an active layer disposed between the first window layer and the second window layer to generate light, in which the active layer includes at least two quantum barrier layers, at least one quantum well layer, and an aid layer disposed between the quantum well layer and the quantum barrier layer.

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Disclosed is a light emitting apparatus. The light emitting apparatus (100) includes a substrate (110), a plurality of emitters (E₁ to E_N) disposed on the substrate (110) and configured to emit light, at least one color-determining layer (122, 124, 126) disposed on the plurality of emitters (E₁ to E_N), and a barrier layer (130) surrounding the color-determining layer (122, 124, 126).

According to one aspect of the present disclosure, there may be provided a display device including: a display board; a plurality of light sources supported by the display board to generate light; and an electrode body electrically connecting the display board and the plurality of light sources, a peak wavelength difference of the light emitted from the plurality of light sources being 5 nm or less.

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The disclosed technology relates to a light emitting device and a light emitting apparatus having the same. The disclosed technology discloses a light emitting apparatus 10 including a substrate 100 and a plurality of light emitting devices 200 disposed on the substrate 100, and at least one substrate common electrode 110 and a plurality of substrate individual electrodes 120 formed on the substrate 100, wherein N light emitting devices 200<1>~200<N> (N is a natural number greater than or equal to 2) are commonly connected to the substrate common electrode 110 to form a light emitting group G.

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A light emitting device and a light emitting apparatus including the same are disclosed. A light emitting device includes a substrate, a plurality of protrusions protruding from one surface of the substrate, and a light emitting structure disposed on the substrate.

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A light emitting module according to an embodiment includes: a base plate; a light emitting device array substrate disposed on the base plate, and including a plurality of light emitting devices; a molding member covering the light emitting devices; a circuit board having one end electrically connected to the light emitting device array substrate; a connector electrically connected to an opposite end of the circuit board; and a reinforcement plate disposed under the connector.

The present disclosure relates to a pixel device for displays and a display apparatus including the same. According to an exemplary embodiment, the pixel device may include: a first light emitting source including a first light emitting structure formed by stacking a first-1 semiconductor layer, a first active layer, and a first-2 semiconductor layer on a first base; a second light emitting source including a second light emitting structure formed by stacking a second-1 semiconductor layer, a second active layer, and a second-2 semiconductor layer on the first light emitting source; a third light emitting source including a third light emitting structure formed by stacking a third-1 semiconductor layer, a third active layer, and a third-2 semiconductor layer on the second light emitting source; and a common electrode electrically connected in common to the first-1 semiconductor layer, the second-1 semiconductor layer, and the third-1 semiconductor layer; a first electrode electrically connected to the first-2 semiconductor layer; a second electrode electrically connected to the second-2 semiconductor layer; and a third electrode electrically connected to the third-2 semiconductor layer. The common electrode and the first electrode may be formed along a side surface of the second-1 semiconductor layer and a side surface of the third-1 semiconductor layer to form a stepped structure.