Ushio Inc.

A discharge lamp (10) includes an arc tube (2), a pair of electrodes (3,4) disposed to face each other in the arc tube (2), two lead rods (7) each connected to a corresponding electrode of the pair of electrodes (3,4), and a hydrogen getter (8) that adsorbs hydrogen in the arc tube (2), in which the hydrogen getter (8) includes a getter material (12) that is constituted of a foil and adsorbs hydrogen, and a sealed container (13) that has a flat cross section and encloses the getter material.

A discharge lamp (1) includes: a light-emitting tube (2); and an anode (3) and a cathode (5) that face each other in a first direction, the anode (3) includes: a body part (20); a shrink part (22) that is joined to an end of the body part (20) located on the cathode (5) side; a distal end part (26) that is joined to an end of the shrink part (22) located on the cathode (5) side; and a sealed space (15) in which a heat transfer body (13) is sealed, a distance (d1) between the sealed space (15) and the distal end part (26) is shorter than a distance (d2) between the sealed space (15) and the body part (20), and the shrink part (22) has a shape in which an inclination relative to the first plane changes to become gentler toward the cathode (5).

In a discharge lamp (100) including a cathode (4) and an anode (3) disposed to face each other in a one axis direction, the cathode (4) includes a cathode outer part (13) containing tungsten and a cathode inner part (12) surrounded by the cathode outer part (13), the cathode inner part (12) has a tungsten density that is lower than a tungsten density of the cathode outer part (13), and the cathode outer part (13) has a tip containing an emitter substance, and, in a plane where the cathode inner part (12) passes through a position closest to an outer surface of the cathode outer part (13) and is orthogonal to the one axis, the cathode inner part (12) has a width d1 that is equal to or less than 40% of a width d2 of the cathode outer part (13) on the plane.

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A semiconductor light-emitting element including an AR film having long-term reliability and low reflectance is provided.A semiconductor light-emitting element 100 includes: a semiconductor substrate 110, an epitaxial layered structure 120 made of an AIGalnP-based material, and an anti-reflection (AR) film 160. The AR film 160 includes a first layer 162 containing Al₂O₃ formed on an emission side end surface S1 of the epitaxial layered structure 120, and a second layer 164 formed on the first layer 162. A rare gas element content in the first layer 162 is larger than a rare gas element content in the second layer 164.

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …