Halliwell, Bethan Frances

The present disclosure provides a magnetic multi-turn sensor having a length of magnetoresistive film, wherein the magnetoresistive film comprises a free layer of ferromagnetic material. The free-layer of ferromagnetic material has at least one region of increased thickness, relative to a thickness of the free-layer along the rest of the length of magnetoresistive film. In particular, the free layer is provided with an increased thickness in regions where an increased operating window is required. For example, in closed loop sensors, the points in which two section of magnetoresistive film cross (e.g., to close the loop) may require a higher magnetic operating window to prevent domain wall nucleation in that region.

The present disclosure provides a magnetic arrangement for use with a magnetic sensing device comprising an angle sensor and multi-turn sensor, the magnetic sensing device being arranged in off-shaft position. Specifically, the present disclosure provides a diametrically magnetized magnet in which the amount of magnetic material in the region of the magnetic poles is reduced relative to the regions between the magnet poles to thereby provide a more homogenous magnetic flux density. In doing so, this enables the magnet and the sensing device to be arranged more compactly. The present disclosure also provides a method of magnetising the magnetic arrangements described herein for improving the accuracy of the angle sensing measurements when the sensing device is placed in an off-shaft position, wherein the magnet is magnetised in a specific direction by applying a current to two sets of electrical conductors positioned on opposite sides of the magnet.

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