Hamamatsu Photonics Patente

A laser measurement device includes a flow cell including a sample flow path through which a fluid containing a sample to be measured passes, a surface-emitting laser that emits laser light having a beam pattern in which at least two bright parts are arranged with a dark part interposed therebetween along a flow direction of the fluid toward the sample flow path, and a photodetector that detects emitted light emitted from the sample when the sample passes through a region where the beam pattern is formed in the sample flow path.

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The present disclosure relates to an area-based measurement device and method for central wavelength. The apparatus comprises: a measured light-emitting body that emits measured light; a filter switching unit that switches between a first filter and a second filter, thereby allowing the measured light to pass through the first filter and the second filter respectively; and a photosensitive device that detects a first light transmitted through the first filter to obtain a first measurement value, and detects a second light transmitted through the second filter to obtain a second measurement value. The first filter and the photosensitive device constitute a first optical system, and the second filter and the photosensitive device constitute a second optical system. Within a wavelength range of the measured light, a ratio of spectral characteristic curves of the first optical system and the second optical system has no repeated values, and the central wavelength of the measured light is obtained from a ratio of the first measurement value and the second measurement value. Thus, the central wavelength of the measured light can be measured by a simple method.

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A spectroscopic measurement device 1 includes: a light source unit 11 for outputting pump light La and probe light Lb; a terahertz wave generation unit 21 for generating a terahertz wave T by the input of the pump light La; a terahertz wave detection unit 23 to which the terahertz wave T and the probe light Lb are input and which modulates the probe light Lb based on a refractive index that changes due to an electro-optical effect according to the input of the terahertz wave T; and a light detection unit 13 for detecting the probe light Lb modulated by the terahertz wave detection unit 23. A main body unit 2 is configured to include the light source unit 11 and the light detection unit 13. A measurement unit 3 is configured to include the terahertz wave generation unit 21 and the terahertz wave detection unit 23. The main body unit 2 and the measurement unit 3 are optically connected to each other by a polarization maintaining fiber F.

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An optical probe comprises: a light reflection unit comprising a reflective surface configured to reflect light, which is incident along a first optical axis, along a second optical axis; a housing that accommodates the light reflection unit such that the light reflection unit is slidable in a first direction parallel to the first optical axis and configured to hold an end of an optical fiber such that the end is positioned on the first optical axis and faces the light reflection unit in the first direction; a first biasing member that biases the light reflection unit to a first side in the first direction in the housing; and an adjustment unit that adjusts a position of the light reflection unit in the first direction by pushing the light reflection unit to a second side in the first direction in the housing.

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An electrical signal measurement apparatus 2A includes a signal conversion unit 30 for intensity modulating measurement light based on an electrical signal of a measurement target of a temporal waveform and outputting as an optical signal corresponding to the electrical signal, a waveform measurement unit 40 for measuring a temporal waveform of the optical signal, and a waveform analysis unit 52 for obtaining the temporal waveform of the electrical signal based on a measurement result of the optical signal. The waveform measurement unit 40 includes a streak tube 42 including a photocathode for inputting the optical signal, a sweep electrode, and a phosphor screen, an imaging element 44 for capturing a fluorescence image generated on the phosphor screen and outputting a waveform image, and an input optical system 41 for inputting the optical signal to the photocathode, the waveform analysis unit 52 obtains the temporal waveform of the electrical signal based on the waveform image, and the input optical system 41 inputs the optical signal to the photocathode as a line-shaped optical image extending in a direction intersecting with a sweep direction. Thus, an electrical signal measurement apparatus and a measurement method capable of measuring a temporal waveform of an electrical signal at high speed are realized.

A semiconductor inspection apparatus 1A includes an inspection optical system 11 for irradiating a semiconductor device D with probe light and outputting reflected light, a light measurement unit 20 for detecting the reflected light and outputting an electrical signal having a temporal waveform according to a temporal change of an intensity, a signal conversion unit 30 for intensity modulating measurement light based on the electrical signal and outputting as an optical signal corresponding to the electrical signal, a waveform measurement unit 40 for measuring a temporal waveform of the optical signal, and a waveform analysis unit 52 for obtaining the temporal waveform of the electrical signal based on a measurement result of the optical signal. The waveform measurement unit 40 includes a streak tube including a photocathode for inputting the optical signal, a sweep electrode, and a phosphor screen, and an imaging element for capturing a fluorescence image generated on the phosphor screen and outputting a waveform image, and the waveform analysis unit 52 obtains the temporal waveform of the electrical signal based on the waveform image. Thus, a semiconductor inspection apparatus and an inspection method capable of measuring a temporal change of an intensity of reflected light when a semiconductor device is irradiated with probe light at high speed are realized.

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An inspection device 1 for detecting foreign matter F, which is a transparent substance, in an object S comprises: an irradiation unit 3 configured to irradiate the object S with inspection light L0 including a plurality of wavelengths; a spectroscopic detection unit 4 configured to detect light L1 from an irradiation position R of the inspection light L0 in the object S and output a spectroscopic spectrum D indicating luminance of each wavelength at the irradiation position R; and a determination unit 5 configured to determine presence or absence of the foreign matter F at the irradiation position R based on information about periodicity of the spectroscopic spectrum D.

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The qubit detection module includes an imaging unit, a processing unit, and an output unit. The imaging unit captures an imaging area including the arrangement position of a qubit and generates imaging data corresponding to the imaging area. The processing unit calculates state information indicating the state of the qubit, with a smaller data volume than the imaging data, based on the imaging data. The output unit outputs the state information to the outside of the module.