Iucf-hyu (Industry-University Cooperation Foundation Hanyang University)

The present invention relates to a gate driver (10, 1042) including stages (ST). Each of the stages (ST) includes an input transistor (M1) that transmits an input signal (IN) to a Q node in response to a clock signal (CLK), a pull-up transistor (M5) that outputs a high gate voltage (VGH) as an output signal (OUT) in response to a signal of a QB node, a first pull-down transistor (M5) that outputs a low gate voltage (LGV) as the output signal (OUT) in response to a signal of the Q node, a first control transistor (M9) that transmits a signal of a QB node of a previous stage (ST) to a B node in response to the signal of the Q node, and a second pull-down transistor (M11) that outputs the low gate voltage (LGV) as the output signal (OUT) in response to a signal of the B node.

Provided is a method for manufacturing a dielectric elastomer, the method including: preparing a co-solvent; preparing a base source by mixing the co-solvent with a polymer precursor; preparing a dielectric elastomer source by mixing the base source with nanoparticles; and preparing a dielectric elastomer in which a polymer formed from the polymer precursor surrounds the nanoparticles by coating and curing the dielectric elastomer source on a support, wherein adjacent nanoparticles form a cluster.

Disclosed are a dry binder for a rechargeable lithium battery, an electrode for a rechargeable lithium battery including the same, and a rechargeable lithium battery including the same, the dry binder including a modified polytetrafluoroethylene comprising carbon (C), fluorine (F), and oxygen (O), wherein the modified polytetrafluoroethylene has a ratio (I_OH/I_CF2) of a peak intensity (I_OH) corresponding to OH relative to a peak intensity (I_CF2) corresponding to CF₂ of about 0.03 to about 0.3 in an FT-IR spectrum measurement.

Provided are a method for manufacturing an In-based composite oxide semiconductor layer having preferential orientation crystallinity and a thin film transistor including the In-based composite oxide semiconductor layer. A method for crystallizing the In-based composite oxide semiconductor layer includes forming an In-based composite oxide semiconductor layer on a substrate and performing a first heat treatment on the substrate. The first heat treatment breaks metal-oxygen bonds in the In-based composite oxide semiconductor layer but maintains the amorphous state of the In-based composite oxide semiconductor layer after the first heat treatment. In-based oxide conductor patterns are formed on both ends of the In-based composite oxide semiconductor layer, and a second heat treatment is performed on the substrate to crystallize the In-based oxide conductor patterns to have bixbyite crystals. A third heat treatment is performed on the substrate to induce crystallization of the In-based composite oxide semiconductor layer by the crystallized In-based oxide conductor patterns, thereby crystallizing the In-based composite oxide semiconductor layer to be preferentially oriented in a direction.

A radiation-hardened circuit is disclosed. The radiation-hardened circuit includes: a time delay circuit configured to invert an input signal received through a first terminal and to output an inverted input signal through a second terminal; a first output circuit configured to output a first clock signal by mitigating a transient voltage increase of a clock signal; a second output circuit configured to output a second clock signal by mitigating a transient voltage decrease of the clock signal; and a switch circuit configured to transmit one of the first clock signal and the second clock signal to the first terminal in response to the inverted input signal.

A method and device for recovering threshold secret are disclosed. The disclosed method comprises: the steps of: (a) obtaining first shares generated by a first share generation structure from participants; (b) determining whether the number of the obtained first shares is greater than or equal to a first threshold value (t); (c) recovering a secret by a (t,n) threshold secret recovery method when the number of the first shares is greater than or equal to the first threshold value (t); (d) obtaining second shares generated by a second share generation structure from participants when the number of the obtained first shares is less than the first threshold value (t); and (e) recovering a secret using the obtained first shares and the obtained second shares, wherein a critical share set is determined so that the number of shares of the critical share set, which is a subset of the intersection of the first share set generated by the first share generation structure and the second share set generated by the second share generation structure, is greater than or equal to a critical threshold value (r) that is less than the first threshold value. According to the disclosed device and method, the recoverability of a secret can be improved even when a share is lost by considering the characteristics of secret sharing participants, and even in a state where secret recovery by a specific share structure is impossible due to the loss of a large number of shares, there is an advantage in that the recoverability of a secret can be improved by using another form of secret recovery method.

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …