Nichia Patente

A light-emitting device includes: a substrate having a mounting surface; a semiconductor laser element supported by the mounting surface; a first mirror member supported by the mounting surface and having a first reflective surface oriented obliquely upward; a cover that has a facing surface facing the mounting surface of the substrate, has an upper surface positioned on a side opposite to the facing surface, and is positioned above the semiconductor laser element and the first mirror member; and a second mirror member supported by the upper surface of the cover and having a second reflective surface. The first reflective surface reflects a laser beam to change a traveling direction of the laser beam to a direction away from the mounting surface of the substrate. The cover transmits the laser beam reflected by the first reflective surface. The second reflective surface reflects the laser beam reflected by the first reflective surface.

A fluoride phosphor containing: manganese; fluorine; an element M including at least one selected from the group consisting of Group 4 elements, Group 13 elements, and Group 14 elements; and at least one selected from the group consisting of an alkali metal and an ammonium ion. When the total number of moles of the alkali metal and the ammonium ion is 2, the number of moles of the manganese is greater than 0 and less than 0.2, the total number of moles of the element M is greater than 0.8 and less than 1, and the number of moles of the fluorine is greater than 5 and less than 7. The fluoride phosphor has a particle diameter ratio (Da/Dm) that is 0.85 or greater, where Da is a mean particle diameter measured by a FSSS method, and Dm is a volume median diameter measured by a laser diffraction particle size distribution measurement method.

A light-emitting element includes: a first semiconductor portion including a first n-side semiconductor layer, a first active layer disposed on the first n-side semiconductor layer and configured to emit ultraviolet light, and a first p-side semiconductor layer disposed on the first active layer; and a second semiconductor portion including a second n-side semiconductor layer disposed on the first semiconductor portion, a second active layer disposed on the second n-side semiconductor layer and configured to emit ultraviolet light, and a second p-side semiconductor layer disposed on the second active layer. The first p-side semiconductor layer includes a first layer containing Al and a second layer disposed on the first layer and containing Al and a p-type impurity. The second p-side semiconductor layer includes a third layer containing Al and a fourth layer disposed on the third layer and containing Al and a p-type impurity.

A wavelength beam combining device includes: a plurality of laser light sources configured to emit a plurality of laser beams in a first direction and having mutually different peak wavelengths and central axes arranged in a second direction intersecting the first direction; a first diffraction grating disposed at a position where the plurality of laser beams are received, the first diffraction grating being configured to diffract the plurality of laser beams in different directions according to wavelengths of the laser beams to cause the diffracted laser beams to enter the second diffraction grating; a second diffraction grating configured to diffract the plurality of laser beams diffracted by the first diffraction grating to form a wavelength-combined beam, and to direct the wavelength-combined beam in the first direction; and an optical coupling unit configured to couple the wavelength-combined beam to an optical transmission fiber and to be movable in the second direction.

An optical system for lighting according to an embodiment includes: a laser light source configured to emit first light having a peak wavelength in a range of 420 nm to 480 nm; a wavelength conversion member including a phosphor layer including two or more types of phosphor particles, part of the first light being incident on the wavelength conversion member, from which second light exits; and a reflective-transmissive member configured to transmit part of the first light and reflect part of the second light as third light, in which a transmittance of the reflective-transmissive member is less than 85% for light having a wavelength of 450 nm, and is 20% or less for light having a wavelength of 550 nm.

A light-emitting device includes a support including a wall portion; a light-emitting element placed on the support and surrounded by the wall portion in a plan view; a first light-transmissive member having a first outer surface and a second outer surface, which is located above the first outer surface and is located inside the first outer surface in the plan view, and covering the light-emitting element and the wall portion; and a light-shielding member covering the first light-transmissive member. The first outer surface and the second outer surface are exposed from the light-shielding member, and a surface roughness of the first outer surface is rougher than a surface roughness of the second outer surface.

A vehicle light source device (100) includes: a plurality of light sources (1) arranged in two rows and n columns, wherein n is a natural number of 4 or greater, the plurality of light sources (1) including: a plurality of first light sources (1-1) arranged in a row direction in a first row, each of the first light sources (1-1) comprising a first light emitting element (11-1) and a first light transmissive member (12-1) arranged on the first light emitting element (11-1), and a plurality of second light sources (1-2) arranged in the row direction in a second row, each of the second light sources (1-2) comprising a second light emitting element (11-2) and a second light transmissive member (12-2) arranged on the second light emitting element (11-2).

A light source module includes a substrate, light sources positioned on an upper surface of the substrate, and an optical member including light control parts and positioned above the substrate such that the light sources are located between the substrate and the optical member.

A light source module includes a substrate, light sources positioned on an upper surface of the substrate, and an optical member including light control parts and positioned above the substrate such that the light sources are arranged between the substrate and the optical member.

A semiconductor laser element includes: a semiconductor layered portion including first and second semiconductor layer portions respectively including first and second conductivity-type semiconductor layers, and an active layer between them; a ridge in the semiconductor layered portion; and a diffraction grating. One end surface of the semiconductor laser element serves as a light-emitting surface. The ridge includes, a first ridge, and a second ridge including a first protective film on the semiconductor layered portion and located at a light-emitting surface side in a top view. The diffraction grating is located between the second semiconductor layer portion and the first protective film and has a periodic structure alternately including parts of the second semiconductor layer portion and the first protective film. In a top view, an outer periphery of the first protective film excluding the light-emitting surface side and a boundary between the first and second ridges is located between outer peripheries of the second ridge and the diffraction grating.

A wavelength conversion member includes a substrate having light reflectivity, and a phosphor layer disposed on the substrate and including phosphor particles, oxide particles adhering to the phosphor particles, and a covering film containing silicon oxide and covering the phosphor particles and the oxide particles. A material of the oxide particles differs from a material of the covering film, and an extinction coefficient of the covering film is less than 1.0 × 10<-5>.

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