Proterial

To improve the reliability of a silicon carbide epitaxial substrate. A silicon carbide epitaxial substrate including a silicon carbide substrate and an epitaxial layer formed on an upper surface of the silicon carbide substrate is used. Here, a plurality of surface defects is provided on an upper surface of the epitaxial layer. The plurality of surface defects includes minute surface defects that are defects satisfying L < d/tanθ where a length of the surface defect in plan view is denoted as L, a thickness of the epitaxial layer is denoted as d, and an off-angle of the silicon carbide substrate is denoted as θ. In this case, a density of the minute surface defects is 100 counts/cm² or less.

To shorten a carrier lifetime in an epitaxial layer.A technical idea of the present disclosure is that a carrier lifetime distribution including, as an element, a carrier lifetime in an epitaxial layer measured at a plurality of measurement points has the following features. (1) In a case in which the average value of the carrier lifetime is defined as τ_m, τ_m ≤ 0.4 µs is satisfied. (2) In a case in which the standard deviation of the carrier lifetime distribution is defined as σ_τ, σ_τ ≤ 0.5 τ_m is satisfied.

An Fe-based nanocrystalline alloy core including a core wound with an Fe-based nanocrystalline alloy ribbon, the Fe-based nanocrystalline alloy ribbon having a thickness of greater than or equal to 11 µm and less than 14 µm, and a space factor of greater than or equal to 73% as measured in accordance with IEC 60404-8-11:2018.

In an SiC single crystal substrate including a first main surface and a second main surface opposite to the first main surface, the SiC single crystal substrate in which the first main surface is a surface that tilts relative to a {0001} plane at an off-cut angle equal to or larger than 0° and equal to or smaller than 8° is used. In a distribution of phase differences obtained by measuring a phase difference between a first emission light and a second emission light emitted from the second main surface by making an incident light with two mutually perpendicular polarization components and a wavelength of 520 nm into the first main surface, an average value of the phase differences is equal to or smaller than 10 nm, and the maximum value of the phase differences is equal to or smaller than 70 nm.

A scintillator structure includes a scintillator and a reflecting material that covers the scintillator. Here, the scintillator includes a resin and a phosphor, and a phosphor particle perimeter indicating a normalized length of an interface between the phosphor and the resin in a cross-sectional image of the scintillator is smaller than 6.25.

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …