Hitachi Energy Switzerland Patente

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A method for monitoring a transformer (10) comprising a tap changer (16), wherein extracted information comprises a circulating current amplitude (A_C) and/or a circulating current time (tc) covering at least a part of the tap change operation represented by at least one current difference waveform, and/or a transition current time (t_R) covering at least a part of the tap change operation represented by at least one power loss waveform.

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The present disclosure relates to a method for monitoring a power device. The method comprises obtaining at least one frequency spectrum of at least one physical component of the power device, wherein the at least one frequency spectrum comprises at least one eigenfrequency of the at least one physical component of the power device; measuring, using at least one sensor, a vibroacoustic signal of the power device; and determining a signal contribution of the at least one physical component of the power device to the vibroacoustic signal based on the obtained at least one frequency spectrum. The present disclosure also relates to a respective monitoring device and a system comprising at least one sensor and a monitoring device.

A silicon carbide power device (100) having a low on-resistance R_on and a method for manufacturing the same are provided. The silicon carbide power device (100) comprises a first conductivity-type substrate (20), a plurality of silicon carbide layer stacks (30), a continuous insulating layer (40) and a gate electrode layer (45). Each silicon carbide layer stack (30) comprises the following layers stacked on the substrate (20): a first conductivity-type drain layer (35), a second conductivity-type channel layer (37) and a first conductivity-type source layer (36). A plurality of first insulating layer portions (42) laterally cover and surround at least the drain layer (35) and the channel layer (37) of each silicon carbide layer stack (30). Each point of each channel layer (37) is laterally sandwiched between two opposing portions of the gate electrode layer (45), wherein the two opposing portions have a distance (d) of less than 2 µm along a straight line extending through that point of that channel layer (37).

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A transformer core, comprising a first yoke, a second yoke, a column (6) having a column main axis (8) and extending between the first yoke and the second yoke, and an elongate clamping structure (10) comprising an elongate rigid member (12) having a rigid member main axis (14) is provided. The column (6) includes an elongate opening (16) having an opening main axis (18) which is oriented transversal with respect to the column main axis (8). The rigid member (12) is positioned within the elongate opening (16) such that the rigid member main axis (14) is oriented parallel to the opening main axis (18).

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The invention relates to a method for producing an insulator for gas insulated switchgear (20) by injection molding a thermoplastic resin (4). The method comprises a filling step (100) of filling a cavity (3) of a mold (1, 2) with molten thermoplastic resin (4) and a packing step (200) of packing the thermoplastic resin (4) in the mold (1, 2) under controlled pressure. The molten thermoplastic resin (4) is introduced into the cavity (3) via at least a first inlet opening group and a second inlet opening group and the packing step (200) includes a first packing sub-process step (200a) and a second packing sub-process step (200b) of controlling the pressure of the first inlet opening group and the second inlet opening group.

A wall bushing for high voltage application is presented. The wall bushing comprises a grounded shield (2). The grounded shield comprises a grading ring (6) in a distal end thereof. The grading ring has an elliptic cross section (7) with conjugate diameters, wherein a major diameter of the conjugate diameters is arranged in an axial direction of the grounded shield and a minor diameter of the conjugate diameters is arranged in a radial direction of the grounded shield. The major diameter is larger than the minor diameter.

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A semiconductor power module (10) for a semiconductor device comprises a leadframe or substrate (4) and a resin body that is coupled to the leadframe or substrate (4). The resin body includes at least a first resin element (1) and a second resin element (2), wherein a resin material of the first resin element (1) is different from a resin material of the second resin element (2). The resin elements (1, 2) are configured such that they are separated in part at least with respect to surface areas facing each other by means of a recess (5, 6).

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A transformer comprises a transformer housing, a stationary contact (4), a load break rotary switch (6) and a magnetically sensitive indicator component (20). The transformer housing comprises a transformer housing wall (2) separating an inner housing area (I) from an outer housing area (II). The stationary contact (4) is disposed stationary relative to the housing. The load break rotary switch (6) comprises a shaft (8), comprising a shaft portion (10) which is disposed in the inner housing area (I) and a shaft contact (12) attached to the shaft portion (10). The shaft (8) is supported with respect to the transformer housing wall (2) rotatably about a rotary axis (R) between a first position in which the shaft contact (12) is electrically connected to the stationary contact (4) and a second position in which the shaft contact (12) is electrically not connected to the stationary contact (4). The load break rotary switch (6) further comprises a lever (14) connected to the shaft portion (10) with respect to the rotary axis (R) in a rotationally fixed manner, wherein the lever (14) comprises a lever portion (16) having a radial distance (d) from the rotary axis (R). The lever portion (16) comprises a lever magnet (18). The magnetically sensitive indicator component (20) is attached to the transformer housing wall (2), wherein the magnetically sensitive indicator component (20) is placeable selectively into a first state in which the magnetically sensitive indicator component (20) is indicative of the first state and into a second state in which the magnetically sensitive indicator component (20) is indicative of the second state. The magnetically sensitive indicator component (20) is switched from its first state into its second state by the lever magnet (18) when the shaft (8) is rotated from the first position to the second position or vice versa. Thus, an operator of the transformer can make sure that the shaft contact is disconnected from the stationary contact before preforming a maintenance work.

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A power semiconductor device (1) comprising a semiconductor body (2) extending in a vertical direction between a first main surface (21) and a second main surface (22), a trench (4) extending from the first main surface (21) into the semiconductor body (2) in the vertical direction, and an insulated trench gate electrode (3) that is formed on the first main surface (21) and extends into the trench (4) is specified, wherein the trench (4) comprises along a main horizontal extension direction of the trench (4) a plurality of alternating deeper segments (41) and the insulated trench gate electrode (3) continuously extends over the plurality of segments (41).

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The present disclosure relates to an enclosure for an electric device in a high voltage electric field, the enclosure (1) comprising at least one top element (2) and at least one corresponding bottom element (3) extending circumferentially from a centre portion (6), wherein the top and the bottom elements are plate-like elements disposed substantially parallel to each other at a predetermined distance to provide a space therebetween. The top and bottom elements are each electrically connected at one end at the centre portion, and in electrical contact at respective circumferential ends to form at least a portion of the enclosure. The enclosure is at least partially constructed of a conductive material. At least two slots are provided in the enclosure extending from the centre portion to a circumference to separate different portions of the enclosure.

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A vacuum interrupter assembly (10) for a power diverter switch comprises a vacuum interrupter (11) and a driving mechanism (12) which is coupled to the vacuum interrupter (11) and which is configured to drive opening and closing of electrical contacts of the vacuum interrupter (11). The driving mechanism (12) includes a driving rod (19) and a guiding tube (18) enclosing the driving rod (19) such that the driving rod (19) is axially movable inside the guiding tube (18) along a longitudinal axis (L) of the vacuum interrupter assembly (10). A damping unit (20) is coupled with the driving mechanism (12) and comprises a first chamber (21), a second chamber (22) and a piston (29) arranged there between with respect to the longitudinal axis (L), wherein the chambers (21, 22) are coupled with each other hydraulically and limited by the guiding tube (18) and the piston (29), and wherein the piston (29) is coupled with the driving rod (19) axially movable along the longitudinal axis (L) such that in interaction with a fluid the damping unit (20) provides hydraulic damping both when opening and when closing the electrical contacts of the vacuum interrupter (11) due to movement of the driving rod (19) and the piston (29) .

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