Hon Hai Precision Industry

Embodiments of the present disclosure provide a negative electrode heteroatom-doped carbon material. The negative electrode heteroatom-doped carbon material includes carbon element, nitrogen element, and oxygen element. A weight percentage of the carbon element is in a range from 77% to 81%, a weight percentage of the nitrogen element is in a range from 8% to 12%, and a weight percentage of the oxygen element is in a range from 4% to 6.5%, based on a total weight of the negative electrode heteroatom-doped carbon material being 100%.

The present disclosure relates to a silicon-carbon composite anode material, which has a core-shell structure including a core layer of nano-silicon and a shell layer at least partially or fully coating the core layer of nano-silicon, the shell layer includes at least one layer of nitrogen-doped graphite. Sizes of the core-shell structure are in a range of 5 µm to 10 µm, and the nitrogen content of the nitrogen-doped graphite layer is less than or equal to 10%. Additionally, the present disclosure provides a preparation method for the silicon-carbon composite anode material and a secondary battery including the silicon-carbon composite anode material.

The present disclosure relates to a release film for an oxide solid-state electrolyte membrane. The release film includes a release substrate layer, and an EVA functionalized coating applied to a surface of the release substrate layer, wherein the EVA functionalized coating has a vinyl acetate content ranging from 10% to 50%. The present disclosure further relates to an oxide solid-state electrolyte membrane including the release film, an oxide solid-state electrolyte membrane body, and a carrier. The oxide solid-state electrolyte membrane body is positioned between the release film and the carrier, and the release film is bonded to the oxide solid-state electrolyte membrane body through the EVA functionalized coating.

The present disclosure provides a battery cathode material, including a lithium nickel manganese oxide powder, a crystal structure of the lithium nickel manganese oxide powder is single crystal, a particle size span of the lithium nickel manganese oxide powder is less than 5, and the particle size span is (D<90>-D<10>)/D<50> from a particle size distribution.

An apparatus for manufacturing solid-state battery, the apparatus includes a clamping platform, a shaping unit, and a side-package unit. The clamping platform includes a bottom base and a top base. The shaping unit includes a lower shaping mechanism and an upper shaping mechanism. The upper shaping mechanism is disposed surrounding the top base and includes a trimming component having trimming plates. The trimming plates are wedge plates with taper. The lower shaping mechanism is disposed surrounding the bottom base and includes a fixing component having fixing plates. The fixing plates are wedge plates with taper. The inner dimension of the fixing component is greater than the inner dimension of the trimming component. The side-package unit includes taping clamps disposed laterally surrounding the shaping unit.

A method of preparing an ionic liquid includes the following steps. A halogen-containing compound is reacted with a first compound to form a second compound. The halogen-containing compound includes a halohydrocarbon, a sulfonyl halide, or a combination thereof. The first compound includes an amine compound having a tertiary amine group, a phosphine compound, or a combination thereof. The second compound includes a first quaternary ammonium salt, a first quaternary phosphonium salt, or a combination thereof. The second compound and a lithium salt are reacted in a microwave device to form a third compound. The third compound includes a second quaternary ammonium salt, a second quaternary phosphonium salt, or a combination thereof. Anions of the second compound and the third compound are different. A microwave power of the microwave device is 700 watts to 1400 watts.

A semiconductor device includes a substrate structure (100), a source structure (110), a drain structure (120), and a gate structure (130). The source structure, the drain structure, and the gate structure are over the substrate structure and are arranged along a first direction (D1). The drain structure includes a plurality of first island structures (121) and a plurality of second island structures (122) arranged alternately and spaced apart along a second direction (D2). The second direction is substantially perpendicular to the first direction. Each of the first island structures includes a p-type semiconductor layer (121a) and a first metal electrode (121b) over the p-type semiconductor layer. Each of the second island structures (122) includes a second metal electrode (122a). In a conducting state, a potential of the first metal electrode of each of the first island structures is different from a potential of the second metal electrode of each of the second island structures.

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