Samsung Electronics
🇰🇷 Südkorea aktiv
Südkoreanischer Elektronikkonzern und Teil der Samsung-Gruppe. Entwickelt und produziert Halbleiter, Speicherchips, Displays, Smartphones, Unterhaltungselektronik sowie Haushaltsgeräte für den globalen Markt.
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Patente
72.110 gesamt| Patent | |||
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02.09.2026
System und Verfahren zur Mehrfach-Ap-Koordinationsverhandlungsindikation
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Status
Angemeldet am 24.02.2026
Anhängig
Vertretung
Zusammenfassung
A system (100) and a method are disclosed for wireless communication. The method includes transmitting, by a first access point, AP (101), capability information indicating one or more multi-access point coordination, MAPC, schemes; and transmitting, by the first AP (101), an MAPC negotiation indication indicating an enabled state or a disabled state for MAPC negotiation. |
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02.09.2026
Systeme und Verfahren zur Verarbeitung von Verschlüsselung in einem Speicher auf Mobilen Systemen auf einem Chip
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Status
Angemeldet am 26.02.2026
Anhängig
Vertretung
Zusammenfassung
A device, system, and method are disclosed for efficiently enabling Processing-in-Memory, PIM, or processing-near-memory, PNM, compression on mobile systems on a chip, SoC. In an embodiment, a memory device (310) includes a cryptographic engine, CE (316), wherein the memory device (310) is configured to receive encrypted data via a memory input/output, IO, bus (320), and the CE (316) is configured to decrypt the encrypted data to obtain decrypted data. The memory device (310) can further comprise a PIM or PNM device (314) configured to process the decrypted data. |
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02.09.2026
Verfahren und Vorrichtung zur Effizienten Metadatenverwaltung für Grossblockvolumenspeicherung
Software & Datenverarbeitung
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Status
Angemeldet am 30.09.2025
Anhängig
Vertretung
Zusammenfassung
Methods and devices are provided in which a volume manager determines a bucket of a variable-granularity volume map, VVM, for block volume storage, based on a corresponding volume logical block address, vLBA, set; and determines an entry for the vLBA set in the VVM or a fine-grained volume map, FVM, for the block volume storage, based on the determined bucket comprising at least one empty entry or entries of the VVM occupied, wherein the FVM comprises a higher granularity than the VVM. |
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02.09.2026
System und Verfahren zur Datenkompression bei der Verarbeitung mit Niedriger Leistungsdoppeldatenrate in einem Speicher auf einem Mobilen System auf einem Chip
Software & Datenverarbeitung
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Status
Angemeldet am 24.02.2026
Anhängig
Vertretung
Zusammenfassung
A device, system, and method are disclosed for processing-in-memory, PIM, compression. In an embodiment, a method includes obtaining, by an input/output sense amplifier, IOSA (204), from an associated RAM bank (202), compressed data (702); sending, by the IOSA (202), the compressed data (702) divided into a plurality of portions (704); receiving, by a respective decompressor of a plurality of decompressors (306) of a PIM block (212) associated with the RAM bank (202), a respective portion of the compressed data (702); decompressing, by the respective decompressor, the respective portion of the compressed data to obtain a respective portion of decompressed data; and sending, by the respective decompressor, the respective portion of the decompressed data to a respective Arithmetic Logic Unit, ALU, of a plurality of ALUs (308) of the PIM block (212) for processing. |
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26.08.2026
Integrierte Schaltung mit Prüfschaltung
Mess-, Prüf- & Zeitmesstechnik
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Zusammenfassung
An integrated circuit is provided. The integrated circuit includes: a voltage-dividing circuit including a plurality of resistors connected to each other in series, wherein the voltage-dividing circuit is configured to generate, based on a test signal, an internal test signal, at least one first reference signal, and at least one second reference signal; a first low-pass filter configured to receive the at least one first reference signal and generate a first reference voltage; a second low-pass filter configured to receive the at least one second reference signal and generate a second reference voltage; a first comparator configured to compare the first reference voltage to the internal test signal; and a second comparator configured to compare the second reference voltage to the internal test signal. |
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26.08.2026
Horizontale Speicherstrukturen in Logischen Vorrichtungen und Verfahren zu deren Herstellung
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Status
Angemeldet am 02.12.2025
Anhängig
Vertretung
Zusammenfassung
A circuit device (100) includes a semiconductor substrate (102) having a first transistor structure (104). The first transistor structure includes at least one first channel region (106) extending between first source/drain regions (108), first source/drain contacts (110) on the first source/drain regions, respectively, and a first gate (112) on the at least one channel region between the first source/drain contacts. A first spacer (115) electrically isolates one of the first source/drain regions from one of the first source/drain contacts thereon. Related devices and fabrication methods are also discussed. |
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26.08.2026
Wärmerohr, Halbleiterbauelement mit Wärmerohr und Verfahren zur Herstellung davon
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Status
Angemeldet am 11.02.2026
Anhängig
Vertretung
Zusammenfassung
Semiconductor devices and methods of manufacturing the semiconductor devices are provided. For example, a semiconductor device (1) may include: a stack of semiconductor layers including a first semiconductor layer (200B), and a second semiconductor layer (200C) stacked on the first semiconductor layer (200B) in a first direction (Z); a heat sink (300) stacked on the second semiconductor layer (200C) in the first direction (Z); and a heat pipe (100) that extends in the first semiconductor layer (200B), the second semiconductor layer (200C), and the heat sink (300) in the first direction (Z). |
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26.08.2026
Kondensatorstruktur und Verfahren zu Ihrer Herstellung sowie Halbleiterbauelement mit der Kondensatorstruktur
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Zusammenfassung
An example capacitor structure includes a lower electrode structure (70), a dielectric pattern (95) and an upper electrode (105). The lower electrode structure (70) includes a first lower electrode (65) on a substrate (10), and a second lower electrode (62) on a sidewall of the first lower electrode (65). The second lower electrode (62) includes an alloy of a first metal and a second metal. The dielectric pattern (95) is disposed on a surface of the lower electrode structure (70). The upper electrode (105) is disposed on a surface of the dielectric pattern (95). The second lower electrode (62) has a thickness varying in a vertical direction perpendicular to an upper surface of the substrate (10). A weight ratio between the first metal and the second metal is uniform in the vertical direction in the second lower electrode (62). |
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26.08.2026
Nichtflüchtige Speichervorrichtung mit Separater Befehls-/adressenschnittstelle, Verfahren zum Betrieb der Speichervorrichtung und Speichervorrichtung mit der Speichervorrichtung
Akustik, Musik & Datenspeicherung
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Zusammenfassung
A storage device includes a nonvolatile memory device including an input/output register, the nonvolatile memory device sensing data from a memory region corresponding to an address and transmitting the data that is sensed from the memory region, and a storage controller that transmits a command and the address to the nonvolatile memory device via a first bus and that transmits and receives data to and from the nonvolatile memory device via a second bus. The nonvolatile memory device, in response to a first command that is received from the storage controller, outputs a sensing status of first data and stores the first data in the input/output register. |
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26.08.2026
Koordinierte Strahlformung in einem Überlappenden Basisdienstsatz
Nachrichtentechnik & Telekommunikation
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Status
Angemeldet am 23.02.2026
Anhängig
Vertretung
Zusammenfassung
A system and a method are disclosed for coordinating for a coordinated beamforming, Co-BF, in an overlapping basic service set, BSS. The method includes detecting, with at least one of a first access point, AP, an overlapping BSS between a first AP (AP1) and a second AP (AP2) and transmitting, with the first AP (AP1), an indication of whether the first AP (AP1) received a cross-BSS channel state indicator, CSI, report (214c). The method also includes coordinating with the second AP (AP2) by the first AP (AP1), to perform a Co-BF based on the cross-BSS CSI report (214c). |
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