Lambacher, Michael

The present disclosure relates to semiconductor structures and, more particularly, to seal ring structures and methods of manufacture. The structure includes: a trench structure in a GaN stack of material; an ohmic metal contacting an upper surface of the GaN stack of material on a side of the trench structure; and a seal ring structure vertically extending from and in contact with the ohmic metal, on a side of the trench structure.

The present disclosure relates to semiconductor structures and, more particularly, to a contact strap extending to a common source/drain region of adjacent gate structures and methods of manufacture. The structure includes: a first gate structure; a second gate structure adjacent to the first gate structure; a common diffusion region to the first gate structure and the second gate structure; a trench lined with insulator material; and a contact strap extending within the trench and connecting to the common diffusion region.

The present disclosure relates to semiconductor structures and, more particularly, to a lateral heterojunction bipolar transistor (HBT) and methods of manufacture. The structure includes: a buried extrinsic base (20) within a semiconductor material (18); an intrinsic base (24) over and in electrical contact with the extrinsic base (20); an emitter (12) having a semiconductor material with a single crystalline orientation, the emitter being (12) above the intrinsic base (24) and comprising a faceted sidewall (12a); a collector (16) having the semiconductor material with the single crystalline orientation, the collector (16) being above the intrinsic base (24) and comprising a faceted sidewall (16a); and a spacer (14) between the emitter and the collector.

Structures for a Mach-Zehnder interferometer and methods of forming a structure for a Mach-Zehnder interferometer. The structure comprises a Mach-Zehnder interferometer including a first directional coupler, a second directional coupler, a first delay arm between the first and second directional couplers, and a second delay arm between the first and second directional couplers. The first delay arm includes a portion with a U-shape that surrounds a pocket, and the second delay arm includes a portion with a U-shape that extends into the pocket.

The present disclosure relates to an optical fiber positioning device and, more particularly, to an optical fiber positioning device and a method for attaching a fiber optic array to a photonic integrated circuit (PIC). The structure includes: a body having a first end and a second end; a dome shaped indicator provided on the body; a first positioning mark associated with the dome shaped indicator; and a second positioning mark under the first positioning mark and associated with the dome shaped indicator.

Structures for a photonic component and methods of forming a structure for a photonic component. The photonic structure comprises a semiconductor substrate, a first waveguide core including a first plurality of segments, and a second waveguide core including a second plurality of segments. The second plurality of segments are positioned between the first plurality of segments and the substrate.

The present disclosure relates to semiconductor structures and, more particularly, to body contacted transistors and methods of manufacture. The structure includes: an active gate structure on a semiconductor substrate; at least one body contact extending through the active gate structure and connecting to a body region that contains a channel of the active gate which is under the active gate structure; and insulator material isolating the at least one body contact from the active gate structure.

In order to simultaneously achieve suppression of an increase in manufacturing cost and a reduction in influence from precipitation of a sedimentary component on a measurement result, provided is an X-ray fluorescence spectrometric system including a rotation mechanism for rotating a sample cell and a speed control module for controlling a rotation speed of the rotation mechanism. The X-ray fluorescence spectrometric system operates in operation modes including an unstirred measurement mode and a stirred measurement mode. In the unstirred measurement mode, a detector executes measurement during rotation of the rotation mechanism at a constant speed under control of the speed control module. The stirred measurement mode includes a stirring period in which a liquid sample is stirred through rotation of the rotation mechanism at a varying rotation speed which is caused by the speed control module, and a post-stirring measurement period in which the detector executes measurement after the liquid sample is stirred. A liquid sample cell contains the liquid sample and includes a portion in which a cross-section of a containing space parallel to a lower surface is not a circle centered about a rotation axis of the sample cell.

Structures for a memory device and methods of forming a structure for a memory device. The structure (10) comprises a first transistor (48) including a first gate structure (18) and a first source/drain region (31, 32), a second transistor (50) including a second gate structure (20) and a second source/drain region (31, 32), and a capacitor including a first capacitor plate (43) directly coupled to the first source/drain region, a second capacitor plate (40), and a capacitor dielectric layer (38) between the first capacitor plate and the second capacitor plate.

The present disclosure relates to semiconductor structures and, more particularly, to diode triggered silicon controlled rectifiers and methods of manufacture. The structure includes: a vertical silicon controlled rectifier (SCR) having a doped semiconductor material region over a semiconductor substrate; and at least one vertical triggering diode electrically connected to the SCR in series, and having a doped semiconductor material region over a doped region in the semiconductor substrate.