II-VI Delaware

Described herein is a pixelated optical device (100) comprising a substrate (102) and a pair of electrodes (104, 106) including a first (104) and a second (106) electrode. The second electrode (106) is mounted to the substrate (102) and includes a two-dimensional array of pixels (108) extending in both a first and second dimension. Device (100) also comprises a solid-state thin film electro-optic material (112) that is disposed between the first and second electrodes (104, 106) and configured to be drivable into a plurality of states in response to an electric field applied to pixels (108) between the first and second electrodes (104, 106). The electric field applied across each pixel (108) is provided by a drive signal provided to the pixel of the second electrode.

Systems and methods are provided for ring aperture vertical-cavity surface-emitting laser (VCSEL) devices for mode control. A VCSEL is provided where the optical mode and the current confinement is defined by patterning the same layer of the resonant cavity within the epitaxial layer with a ring-shaped aperture. The ring width may be small enough to be single mode along the radius. The two concentric boundaries forming the ring aperture may be of any arbitrary shape as long as the width is small enough to be single mode along the radial direction.

Optical amplifiers, laser devices, and methods of forming such devices are disclosed. One such method includes forming a lower cladding layer on a substrate and forming a doped ceramic layer on the lower cladding layer. The forming of the doped ceramic layer uses a plasma-assisted process that deposits and co-dopes a ceramic material with rare-earth dopants. The method also includes forming an upper cladding layer on the doped ceramic layer, and etching the upper cladding layer and the doped ceramic layer to form a doped ceramic waveguide.

This disclosure describes systems and methods for designing a wafer annealing chamber that combines laminar or near laminar purge gas flows across the wafer, higher flow and pressure in the upper portion of the chamber, and a specific progression of the lasing pattern relative to the purge gas laminar flow direction.

A method of producing vertical silicon surfaces for mirror substrate applications is described. In some embodiments, methods as described herein may create a polishable silicon layer on a SiSiC surface.

A laser diode includes an active region, confinement layers, and cladding layers. The active region includes one or more active layers that each exert a first strain in a first direction and one or more strain compensating layer that each exert a second strain in a second direction that is opposite the first direction. The confinement layers bound the active region. The cladding layers bound the confinement layers. In some embodiments, each active layer comprises InAs quantum dots in a In_rGa_1-rAs quantum well, where 0 ≤ r ≤ 1; and each strain compensating layer comprises a GaAs_1-sP_s layer, where 0 < s ≤ 1. The confinement layers may each comprise a (Al_ZGa_1-Z)_Wln_1-WP layer, where 0 < w < 1 and 0 ≤ z < 1. The cladding layers may each comprise a (Al_yGa_1-y)_xIn_1-xP layer, where 0 < x < 1 and 0 ≤ y < 1.

This disclosure describes systems and methods for an annealing chamber that reduces oxygen infiltration from ambient air during the loading and unloading of a wafer. The wafer annealing chamber has an auxiliary port that is perpendicular to a plurality of exhaust ports. When the loading door is open, the plurality of exhaust ports are closed, and a pressurized zone is generated adjacent to the auxiliary port, in a throat of the annealing chamber.

Systems and methods are provided for patterned embedding on narrow stripe single mode transverse lasers. An example narrow stripe optical emitter device may include an active region containing semiconductor material, a first embedding region located on a first end of the narrow stripe optical emitter device and containing a first embedding material, and a second embedding region located on a second end of the narrow stripe optical emitter device and containing a second embedding material. The active region may include a ridge running between the first end and the second end of the narrow stripe optical emitter device. The first embedding material may be different from the second embedding material with respect to one or more characteristics. The one or more characteristics may include compressive strain related parameters and/or attributes.

Systems and methods are provided for active electro-optical cable assemblies for high-density data transmission systems. An active electro-optical cable assembly may include comprises multi-lane copper cable array assemblies connected to small form factor connectors at a processing unit. At the end of the copper cable arrays, an electro-optical component may be used to convert electrical signals into optical signals. The optical signals may be coupled, via a fiber connector, to optical fibers. The optical fibers may be terminated with a multi-fiber push on connector for pluggable or pigtailed connections.

Disclosed is a heater / dryer that includes an array of one or more vertical cavity surface emitting lasers (VCSELs) disposed on a substrate. A lens assembly or array including at least one lens per VCSEL is disposed on the array of VCSELs opposite the substrate, wherein each lens is spherical or aspherical, with a convex side of the lens facing away from the array of VCSELs. The substrate may be a ceramic substrate. A side of the substrate opposite the one or more VCSELs may be coupled to an underlying substrate which may be a metal core printed circuit board (MCPCB) and/or a water cooled chiller plate. Also disclosed is a method of using the heater / dryer.