II-VI Delaware

Embodiments of the present disclosure include a vertical-cavity surface-emitting laser device, the device including a mesa with a non-circular cross-section. Embodiments also include a plurality of layers with one or more oxide layers. Embodiments may also include one or more non-oxide layers. The mesa may be operable as a dielectric top mirror.

An optical link includes an optical transmitter with redundant or spare light sources for transmitting optical signals over an optical fiber of the optical link. The optical transmitter uses a first light source to generate and transmit optical signals to an optical receiver via an optical fiber. In response to detecting faulty operation of the first light source, the optical transmitter ceases using the first light source to transmit optical signals to the optical receiver and switch to a second or spare light source to transmit optical signals to the optical receiver via the same optical fiber. In this manner, the optical transmitter may continue to reliably transmit optical signals to the optical receiver over the same optical fiber even in the presence of a faulty light source.

A laser structure includes a substrate including front and back facets and a waveguide formed thereon, the waveguide includes first and second arms extending in spaced relation between the front and back facets. The first arm includes a distributed feedback (DFB) laser and/or a semiconductor optical amplifier (SOA) and the second arm includes a SOA. At, proximate to, or adjacent the front facet, first ends of the first and second arms are spaced from each other by a first distance (d1) and an anti-reflective coating is disposed over at least the first ends of the first and second arms. At, proximate to, or adjacent the back facet, second ends of the first and second arms are spaced from each other by a second distance (d2). The laser structure is configured or includes additional structure whereupon light propagating in the first arm is coupled to the second arm.

An optical signal generation system for optical signal generation comprises a plurality of light sources; a plurality of optical modulators each one corresponding to one of the plurality of light sources; and a synchronized driver coupled to each of the modulators. Each light source may input a continuous wave (CW) to each optical modulator. The synchronized driver may provide a non-return-to-zero (NRZ) driver signal to each modulator and the optical modulators may modulate each received optical source signal based on the NRZ driver signal communicated to each optical modulator. Each modulated optical signal may be coupled into a transmission medium, thereby generating a multi-level pulse amplitude modulated (PAM) equivalent signal.

Disclosed is an optical data transmission system and method for modifying and/or converting incoming light beams having first intensity profiles into light beams having second intensity profiles, wherein the second intensity profile of each light beam has a unique orbital angular momentum (OAM), for transmitting the light beam's signals having the second intensity profiles over an optical fiber, and for modifying and/or converting the light beams exiting the optical fiber having the second intensity profiles to light beams having third intensity profiles.

Systems and methods are provided for low-stress optical surfacing on reaction bonded silicon carbide. A reaction bonded silicon carbide (RB-SiC) based structure may include a substrate, a physical vapor deposition (PVD) or other suitable vacuum deposition (VD) based optical layer on top of the substrate, and optionally one or more PVD (or other suitable vacuum deposition (VD) technique) based tacking layers disposed immediately on the surface of the substrate.

Described herein is a pixelated optical device (100) comprising a substrate (102) and a pair of electrodes (104, 106) including a first (104) and a second (106) electrode. The second electrode (106) is mounted to the substrate (102) and includes a two-dimensional array of pixels (108) extending in both a first and second dimension. Device (100) also comprises a solid-state thin film electro-optic material (112) that is disposed between the first and second electrodes (104, 106) and configured to be drivable into a plurality of states in response to an electric field applied to pixels (108) between the first and second electrodes (104, 106). The electric field applied across each pixel (108) is provided by a drive signal provided to the pixel of the second electrode.

Systems and methods are provided for ring aperture vertical-cavity surface-emitting laser (VCSEL) devices for mode control. A VCSEL is provided where the optical mode and the current confinement is defined by patterning the same layer of the resonant cavity within the epitaxial layer with a ring-shaped aperture. The ring width may be small enough to be single mode along the radius. The two concentric boundaries forming the ring aperture may be of any arbitrary shape as long as the width is small enough to be single mode along the radial direction.

Optical amplifiers, laser devices, and methods of forming such devices are disclosed. One such method includes forming a lower cladding layer on a substrate and forming a doped ceramic layer on the lower cladding layer. The forming of the doped ceramic layer uses a plasma-assisted process that deposits and co-dopes a ceramic material with rare-earth dopants. The method also includes forming an upper cladding layer on the doped ceramic layer, and etching the upper cladding layer and the doped ceramic layer to form a doped ceramic waveguide.

This disclosure describes systems and methods for designing a wafer annealing chamber that combines laminar or near laminar purge gas flows across the wafer, higher flow and pressure in the upper portion of the chamber, and a specific progression of the lasing pattern relative to the purge gas laminar flow direction.