Intel

Techniques are provided herein to form semiconductor dies with a thermally conductive bond interface to enhance the thermal dissipation from the semiconductor devices. A frontside interconnect region is provided above a semiconductor device layer to, for example, route signals between various semiconductor devices in the device layer. A thermally conductive bond layer may be provided above the frontside interconnect region, such as on a top-most layer of the frontside interconnect region. The thermally conductive bond layer includes a metal such as titanium, ruthenium, copper, or generally any material having a thermal conductivity of at least 1.5 W/m·K. The bond layer may be formed on a material layer that is deposited first on the frontside interconnect region. The material layer may be any of diamond, silicon carbide, copper, or aluminum nitride, to name a few examples.

Embodiments disclosed herein may include an apparatus with a substrate. In an embodiment, an opening is formed through the substrate. In an embodiment, a layer is provided over a sidewall of the opening, and the layer comprises a first magnetic material, and a plug is in the opening. In an embodiment, the plug comprises a second magnetic material that is different than the first magnetic material. In an embodiment, a first via is through the plug, and a second via may be formed through the plug.

Bridge die interposer packages, and related apparatuses, systems, and techniques are discussed. An interposer package includes a bridge die having a routing structure to interconnect multiple integrated circuit (IC) dies of the package. Power is provided to the IC dies by a mesh power supply metallization and a mesh ground metallization that extend from outside a perimeter of the bridge die to within the perimeter and over the routing structure. The bridge die may be absent through silicon vias (TSVs) and may be hanging such that it is exposed at the bottom of the package.

Integrated circuit structures having backside conductive source or drain contacts, and methods of fabricating integrated circuit structures having backside conductive source or drain contacts, are described. For example, an integrated circuit structure includes a dielectric structure over a vertical stack of horizontal nanowires or fin. An epitaxial source or drain structure is laterally adjacent to and coupled to the vertical stack of horizontal nanowires or fin. A conductive source or drain contact structure is laterally adjacent to the dielectric structure and is on and in contact with the epitaxial source or drain structure. The conductive source or drain contact structure is laterally surrounded by a dielectric spacer.

Disclosed herein are devices, methods, and systems for dynamically updating a robot's system modeling parameters while the robot is working to complete a task. The dynamic modeling system receives a set of performance parameters (e.g., for optimization objectives) associated with a task of a robot, wherein the set of performance parameters comprise a first weight associated with an extent of compliance toward completing the task and a second weight associated with a modeling metric in system modeling parameters of the robot. The dynamic modeling system determines control parameters for moving the robot, wherein the control parameters are based on the extent of compliance in relation to the first weight and based on the modeling metric in relation to the second weight. The dynamic modeling system controls a motion of the robot according to the control parameters.

An apparatus comprises a push-pull regulation loop (PPRL), an input terminal, an output terminal, and a plurality of FC circuits. The PPRL comprises a PMOS transistor, an NMOS transistor, and a first plurality of capacitors. The input terminal and the output terminal are coupled to the PPRL via the first plurality of capacitors. The plurality of FC circuits includes a second plurality of capacitors. FC circuits of the plurality of FC circuits are coupled to each other and a rail between the input terminal and the output terminal. An FC circuit of the plurality of FC circuits comprises at least a first transistor switch and a second transistor switch coupled to a corresponding capacitor of the second plurality of capacitors.

Techniques for quality of service (QoS) support for input/output devices and other agents are described. In embodiments, a system includes execution circuitry to execute a plurality of software threads; hardware to monitor or control allocating, among the plurality of software threads, one or more shared resources; and storage to store a data structure to configure and enable monitoring or allocating of the one or more shared resources among the plurality of software threads and one or more channels through which one or more devices are to be connected to the one or more shared resources, the data structure to define one or more resource management domains in the system and which one or more devices are included in which one or more resource management domains.

Examples of an integrated inductor structure including a conductive polymer separation layer as described herein. A conductive polymer layer between the seed layer and the magnetic material in an integrated inductor can act like an isolation layer between the magnetic material and seed layer to improve inductor performance (e.g., by reducing eddy current-induced inductor efficiency degradation). In one example, a microelectronic assembly includes a layer of glass with a first face and a second face, and an inductor in the layer, where the inductor includes a continuous portion of a conductive material between the first face and the second face, a magnetic material at least partially surrounding the conductive material, and a conductive polymer at least partially surrounding the magnetic material.

Embodiments disclosed herein include an apparatus that comprises a first substrate with a first pad on the first substrate, where the first pad is electrically conductive, and a second substrate over the first substrate with a second pad on the second substrate, where the second pad is electrically conductive. In an embodiment, the apparatus further comprises a patch between the first substrate and the second substrate. In an embodiment, the patch comprises a frame with an opening through the frame, and an interconnect within the opening. In an embodiment, the interconnect electrically couples the first pad to the second pad, and the interconnect comprises a liquid metal matrix with filler particles that are electrically conductive.

An apparatus, comprising a memory, configured to store a first data set, comprising kinodynamic data representing a plurality of human-directed movements of a robot; and a second data set, comprising linguistic descriptors of the plurality of human-directed movement of the robot; and a processor, configured to generate a third data set based on the first data set and the second data set, wherein the third data set comprises a plurality of motion primitives of the robot.