II-VI Delaware Patente

Optical amplifiers, laser devices, and methods of forming such devices are disclosed. One such method includes forming a lower cladding layer on a substrate and forming a doped ceramic layer on the lower cladding layer. The forming of the doped ceramic layer uses a plasma-assisted process that deposits and co-dopes a ceramic material with rare-earth dopants. The method also includes forming an upper cladding layer on the doped ceramic layer, and etching the upper cladding layer and the doped ceramic layer to form a doped ceramic waveguide.

A method of producing vertical silicon surfaces for mirror substrate applications is described. In some embodiments, methods as described herein may create a polishable silicon layer on a SiSiC surface.

This disclosure describes systems and methods for designing a wafer annealing chamber that combines laminar or near laminar purge gas flows across the wafer, higher flow and pressure in the upper portion of the chamber, and a specific progression of the lasing pattern relative to the purge gas laminar flow direction.

This disclosure describes systems and methods for an annealing chamber that reduces oxygen infiltration from ambient air during the loading and unloading of a wafer. The wafer annealing chamber has an auxiliary port that is perpendicular to a plurality of exhaust ports. When the loading door is open, the plurality of exhaust ports are closed, and a pressurized zone is generated adjacent to the auxiliary port, in a throat of the annealing chamber.

A laser diode includes an active region, confinement layers, and cladding layers. The active region includes one or more active layers that each exert a first strain in a first direction and one or more strain compensating layer that each exert a second strain in a second direction that is opposite the first direction. The confinement layers bound the active region. The cladding layers bound the confinement layers. In some embodiments, each active layer comprises InAs quantum dots in a In_rGa_1-rAs quantum well, where 0 ≤ r ≤ 1; and each strain compensating layer comprises a GaAs_1-sP_s layer, where 0 < s ≤ 1. The confinement layers may each comprise a (Al_ZGa_1-Z)_Wln_1-WP layer, where 0 < w < 1 and 0 ≤ z < 1. The cladding layers may each comprise a (Al_yGa_1-y)_xIn_1-xP layer, where 0 < x < 1 and 0 ≤ y < 1.

Systems and methods are provided for patterned embedding on narrow stripe single mode transverse lasers. An example narrow stripe optical emitter device may include an active region containing semiconductor material, a first embedding region located on a first end of the narrow stripe optical emitter device and containing a first embedding material, and a second embedding region located on a second end of the narrow stripe optical emitter device and containing a second embedding material. The active region may include a ridge running between the first end and the second end of the narrow stripe optical emitter device. The first embedding material may be different from the second embedding material with respect to one or more characteristics. The one or more characteristics may include compressive strain related parameters and/or attributes.

Systems and methods are provided for active electro-optical cable assemblies for high-density data transmission systems. An active electro-optical cable assembly may include comprises multi-lane copper cable array assemblies connected to small form factor connectors at a processing unit. At the end of the copper cable arrays, an electro-optical component may be used to convert electrical signals into optical signals. The optical signals may be coupled, via a fiber connector, to optical fibers. The optical fibers may be terminated with a multi-fiber push on connector for pluggable or pigtailed connections.

Disclosed is a heater / dryer that includes an array of one or more vertical cavity surface emitting lasers (VCSELs) disposed on a substrate. A lens assembly or array including at least one lens per VCSEL is disposed on the array of VCSELs opposite the substrate, wherein each lens is spherical or aspherical, with a convex side of the lens facing away from the array of VCSELs. The substrate may be a ceramic substrate. A side of the substrate opposite the one or more VCSELs may be coupled to an underlying substrate which may be a metal core printed circuit board (MCPCB) and/or a water cooled chiller plate. Also disclosed is a method of using the heater / dryer.

Systems and methods are provided for waveguides structures with meta-optical structures for routing light between layers. An example method for manufacturing a waveguide structure with meta-optical structures for routing light may include fabricating a plurality of waveguide layers and adding one or more points of redirection where redirection of a light beam may occur. The points of redirection may be added by generating divots and adding meta-optical structures. The points of redirection may be interconnected via a high index optical material to efficiently route light between different waveguide layers and components. The points of redirection may also be configured to split or combine different polarizations of the light beam.

A sensing system may include an illumination projector, an image sensor, and one or more controllers. The illumination projector may project a partial illumination pattern on a target object. The image sensor may sense the partial illumination pattern projected on the target object and may generate signals representative of the sensed illumination pattern. The one or more controllers may control the illumination projector and process the signals generated by the image sensor. The illumination projector may include a microlens array and an emitter array. A spatial relationship of emitters of the emitter array to microlenses of the microlens array may cause the emitter array and the microlens array to project light upon the target object in the partial illumination pattern.

An optical device may be configured for use in quantum random number generation. The optical device may include an optical source configured to emit a light beam; a photodetector configured to detect light; and a polarizer disposed between the optical source and the photodetector, where the polarizer is configured to selectively pass light having a particular polarization. The optical device may include a packaging that includes, at least, the optical source, the photodetector, and the polarizer. The polarizer is configured to selectively pass the light beam when it has a polarization matching the particular polarization. The optical device includes one or more mitigating features for mitigating light feedback into the optical source. The optical device is configured for use in facilitating or enabling quantum random number generation (QRNG) based on detection of the light beam by the photodetector.

The present disclosure provides a novel method for fabricating thermal management devices. The present disclosure is directed to a photocuring ceramic slurry comprising: 50 to 70 wt. % opaque ceramic particles; 30 to 50 wt. % light curing resin; and 0.3 to 1 wt. % dispersing agent, wherein the dispersing agent promotes light to penetrate and cure the photocuring slurry. Thermal management components manufactured from slurries include a vacuum wafer chuck with internal water-cooling channels and a micro-cooler heat management device with internal channels and pins.

In a method and system for filtering a broadband optical, the broadband optical signal is filtered a number of times, optically amplified one or more times during or after being filtered the number of times, and provided to an optical receiving device. The optical filtering may include using the same or different filtering functions. When the optical filtering includes different filtering functions, a first one of the different filtering functions may include phase and amplitude filtering and a second one of the different filtering functions may include amplitude only filtering.

An electrolyte composition includes: an electrolyte; and an additive composition including: an inhibitor that reduces a topography variation resulting from material deposition on the anode of the battery during the charging process; and/or a leveler that reduces an effect of ion concentration gradient between a plurality of tips of the plurality of branches and the base from material deposition on the anode of the battery during the charging process. This electrolyte composition is for use with a battery including an anode and a cathode during a charging process. The anode includes a base and a plurality of branches protruding from the base and spaced apart from one another along the base to form a gap.

This disclosure describes a system for providing a high density three-dimensional electrical and optical direct bond interconnect. The system comprises an electro-optical interposer substrate and a waveguide operably coupled to the substrate. The waveguide comprises an electrical redistribution path that electrically couples at least one application-specific integrated circuit to a photonic integrated circuit, and an optical redistribution path that optically couples the circuits. The configuration enables micron-scale high density routing with both internal and external optical communication channels, allowing scalable integration of multiple electrical and optical devices.

The present disclosure comprises a laser semiconductor system, with the system comprising an n-side layer, an active region, a p-side waveguide layer, and a cladding layer. The system also comprises a plurality of sections, with at least a front section at the front of the semiconductor and a rear section at the rear of the semiconductor. A thickness of the p-side waveguide layer may increase monotonically in each of the plurality of sections in the direction from the front section to the rear section.

A new design of a silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) and method of manufacturing the MOSFET are disclosed. The SiC MOSFET features a trench formed in SiC layers that includes a buried p-well region near the bottom of the trench that extends along a sidewall of the trench. The SiC MOSFET may also include a p-body and built-in channel on an opposite sides of the trench. The SiC MOSFET configurations may help prevent dielectric breakdown and bipolar degradation in the SiC.

In a dispersion compensator and method of use thereof a polarized beam splitter (PBS) reflects a light beam having a first instance of S-linear polarization to a first quarter-wave-plate which passes the light beam in a first direction. A first reflector reflects the light beam back through the first quarter-wave-plate in a second, opposite direction, whereupon the light beam now has a P-linear polarization, through the PBS to a second quarter-wave-plate which passes the light beam in a first direction. A second reflector reflects the light beam back through the second quarter-wave-plate in a second, opposite direction, whereupon the light beam now has a second instance of S-linear polarization, which is reflected by the PBS. The first or second reflector is a chirped volume Bragg grating (CVBG) that reflects spectral components of the reflected light beam at different depths of propagation of said spectral components in the CVBG.

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This disclosure describes an optical communication system for coupling light, via VCSEL or PCSEL, into a multilayer waveguide. The optical communication system comprises a plurality of emitters, a semi-insulating (SI) substrate, a plurality of electrical contacts, a plurality of waveguides, and a diffractive optical coupling system. The SI substrate supports the plurality of emitters. The plurality of electrical contacts are configured to individually modulate each emitter. The plurality of waveguides and the plurality of emitters are separated by an air gap. The diffractive optical coupling system is configured to direct emitted light from the plurality of emitters into the waveguides.

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