Kokusai Electric

A technique of determining a rotational speed of a substrate (200), applied in a substrate processing including intermittently supplying, to the rotating substrate (200), a process gas from an outer edge of the substrate (200) toward an in-plane direction at a constant interval, a predetermined number of times K, during a predetermined duration T, includes: (a) calculating an evaluation value E corresponding to each of a plurality of candidate values N, which are candidate values for the selectable rotational speed of the substrate (200), based on: at least one selected from the group of the predetermined duration T and a supply interval I of the process gas; the predetermined number of times K; and each of the candidate values N; and (b) determining the rotational speed of the substrate (200) to be applied in the substrate processing from among the candidate values N based on the evaluation value E calculated for each candidate value N.

There is provided a technique that includes (a) forming a layer containing a first element on a substrate by performing: (a1) supplying an inhibiting gas to the substrate to form an inhibiting group on the substrate, wherein the inhibiting group inhibits adsorption of a first gas containing an atom of the first element to the substrate; (a2) supplying a promoting gas to the substrate after start of (a1) to form a promoting group on the substrate, wherein the promoting group promotes adsorption of the first gas to the substrate; and (a3) supplying the first gas to the substrate after start of (a2).

To easily supply a large flow rate of a process gas into a process chamber, a technique includes: a first flow path one end of which is connected to a first supply source configured to supply a process gas and the other end of which is connected to a process chamber in which a substrate is processed; a first opening/closing structure provided at the first flow path; a second opening/closing structure provided at the first flow path between the first opening/closing structure and the process chamber; a second flow path one end of which is connected to the first flow path between the first opening/closing structure and the second opening/closing structure and the other end of which is connected to an exhaust apparatus; a storage provided at the second flow path; and a third opening/closing structure provided at the second flow path between the storage and the exhaust apparatus.

A technique includes (a) preparing a substrate (200) including a first film formed inside a recess, a surface of the first film inside the recess being terminated with a first termination that reduces wettability with respect to a processing liquid; and (b) removing at least a portion of the first film formed in a first region on an opening side of the recess while leaving the first film formed in a second region on a bottom side of the recess by supplying the processing liquid to the substrate (200) and selectively exposing, to the processing liquid, the surface of the first film formed in the first region with respect to the surface of the first film formed in the second region.

A technique includes a gas supply system including: a plurality of gas supply lines connected to a process chamber, wherein each of the plurality of gas supply lines includes an inlet-side valve through which a gas flows in, a storage in which the gas is accumulated through the inlet-side valve, and an outlet-side valve through which the gas flows out of the storage; and a regulator installed in at least one of the plurality of gas supply lines and is configured to be capable of regulating a flow path resistance of the gas supply line such that gas supply amounts from the plurality of gas supply lines into the process chamber are matched.

A technique includes a supply process including: (a0) supplying a process gas into a process chamber (201) in which a substrate (200) including a recess on a surface of the substrate (200) is placed; (a1) increasing an internal pressure of the process chamber (201) at least partially simultaneously with (a0); (a2) decreasing the internal pressure of the process chamber (201); and (b) supplying a dilution gas into the process chamber (201) or increasing a flow rate of the dilution gas supplied into the process chamber (201), the supply process being performed so that the internal pressure of the process chamber (201) reaches one or more local maximum values; and an exhaust process of exhausting an interior of the process chamber (201) during at least a portion of the supply process, wherein, in the supply process, (b) is started before (a2) ends for a first time.

It is possible to improve a film forming rate. There is provided a technique that includes: (a) supplying a first gas containing a primary element constituting a film and a halogen element to a substrate; (b) supplying a first reducing gas containing hydrogen to the substrate; (c) supplying a second reducing gas containing hydrogen to the substrate, wherein a material of the second reducing gas is different from that of the first reducing gas; (d) performing (a) and (b) in parallel, wherein a supply amount of the first reducing gas is decreased compared to that of when a supply of the first reducing gas is started while performing (a) and (b) in parallel; and (e) performing (d) and (c) a predetermined number of times to form the film on the substrate.

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …