KU Leuven Research & Development Patente

A method (1000) for use in millimeter-wave beamforming comprises acquiring (1004) a direction of a first beam (103) and a direction of a second beam (105); selecting (1008) an analog beamforming profile based on an angular separation between said first beam (103) and said second beam (105); and communicating (1010) through said first beam (103) and said second beam (105) according to the selected analog beamforming profile.

Example embodiments relate to a computer-implemented method for reducing self-interference (130) from a transmitter array (220, 250) at a receiver array (230, 260), the computer-implemented method comprising: generating (201) a set of beamforming antenna pairs (210) by selecting at least two non-identical antenna pairs (214, 215) from transmitter antennas (221 - 223) within the transmitter array (220) or from receiver antennas (261, 262, 263) within the receiver array (260); determining (202) a null space of the self-interference (217) at the receiver array (230, 260) comprising null space vectors (216) of the respective beamforming antenna pairs (211 - 213); and determining (203) beamforming coefficients (218) for the respective antennas within the set of beamforming antenna pairs (210) that reduce self-interference at the receiver array based on a linear combination (219) of the null space vectors (216) of the respective beamforming antenna pairs (211 - 213).

A reservoir computing method and related system. The method comprises providing a pulse wave representation of a reservoir input and a MOSFET-based compute node of a reservoir computing system. A body terminal of the MOSFET is configured to apply a bias signal to the body region. The MOSFET is operable in floating mode in the absence of the bias signal. The MOSFET displays a history-dependent threshold voltage when driven by input pulses in floating mode. The method further includes removing the bias signal from the body terminal; applying input pulses to a gate terminal of the MOSFET, thus causing history-dependent variations in the threshold voltage; and acquiring an output sequence related to the compute node while the MOSFET threshold voltage is varying, by repeatedly applying readout pulses to the gate terminal of the MOSFET and simultaneously detecting a current through a channel region of the MOSFET.

A Code-Division Multiplexing radar system, comprises: a number NT transmitters, each configured to transmit a radar signal modulated by a unique code sequence, wherein one of the transmitters is configured to have a transmission power higher than the rest transmitters, a number NR receivers, each configured to receive a reflection signal caused by the transmitted radar signals, and reflected by a target, and a controller, configured to: - generate a number N virtual receive elements, for each virtual receive element VXp,q: - to detect the target, - based on the detected target, to generate a reconstructed interference signal ũp,q caused by the radar signals transmitted by the other transmitters except for the qth radar signal, and - to update a virtual receiving signal at said virtual receive element VXp,q based on the reconstructed interference signal x2.

A device (1) comprising: a first electrode (4) comprising a first electrode material of a type that, if oxidized by an oxidizing agent, is electrically insulating, a second electrode (2) comprising a second electrode material of a type that, if oxidized by said oxidizing agent, is electrically conducting, and a threshold switch layer (3) between the first electrode (4) and the second electrode (2), the threshold switch layer (3) comprising a material being switchable from an electrically insulating state to an electrically conducting state by a voltage between the first (4) and second electrode (2) crossing a threshold voltage, and a first electrode interface (40) between the threshold switch layer (3) and the first electrode (4), and a second electrode interface (20) between the threshold switch layer (3) and the second electrode (2), wherein the device (1) comprises the oxidizing agent suitable for being moveable between the first electrode (4) and the second electrode (2), the threshold switch layer (3) providing a passage for moving the oxidizing agent between the first electrode (4) and the second electrode (2).

A quantum circuit and related manufacturing method are disclosed. The quantum circuit comprises a vertical Josephson junction (1001) formed by a bottom electrode (810) in a first superconducting material layer, a tunnel barrier (830), and a top electrode (820) in a second superconducting material layer. A contact portion (811) and a coupling portion (812) of the bottom electrode are located inside and outside the Josephson junction, respectively. A transmon qubit of the quantum circuit comprises the Josephson junction and a shunt capacitor formed by the top electrode and the contact portion of the bottom electrode as capacitor plates. A readout circuit is capacitively coupled to the bottom electrode through the coupling portion and includes a coupling head (861). The coupling portion is fitted into a recessed portion of the coupling head. The top electrode is configured as a floating electrode, not resistively coupled to the first superconducting material layer.

In a first aspect, the present invention relates to a method for depositing a layer of metal phosphate (20), comprising: a) providing a working electrode (10) in contact with a solution (30) comprising metal cations and phosphate anions; and b) electrochemically forming the layer of metal phosphate (20) onto the working electrode (10); wherein the layer of metal phosphate (20) comprises a plurality of dome-shaped substructures (21) and the solution (30) further comprises an agent which promotes said dome-shaped substructures (21) being formed such that an average size thereof is reduced.

The present invention relates to a method for performing an equality checking of a first character and a second character in a cryptographic application wherein programmable bootstrapping is used, at least one of said first and said second character being encrypted, the method comprising:o checking the equality of the first character with the second character by determining a difference between said characters, ando using the difference as input for a lookup table operation through a programmable bootstrap operation, said lookup table yielding a first predetermined value if the difference equals zero and a second predetermined value different from the first predetermined value, so obtaining an equality result for the pair of characters formed by the first and the second character.

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A light sensor (100) for spectrally resolved light detection, said light sensor (100) comprises: an upper reflective element (104); a lower reflective element (106); a photo-sensitive element (114) therebetween; a spacer element (108), configured to form the lower reflective element (106) or configured to be arranged between the upper (104) and the lower reflective element (106); wherein the elements form a stack of layers which define a resonance structure (102a, 102b, 102c) between the upper (104) and the lower reflective element (106) for providing a resonance of light; wherein the spacer element (108) comprises at least two different materials (110, 112), a distribution of which is different between different pixels in an array of pixels such that a resonance wavelength is different for different pixels; and wherein for a plurality of pixels, geometrical structures smaller than the resonance wavelength are defined by the at least two different materials (110, 112).

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An imaging device (100) for wavelength dependent imaging comprising: a semiconductor substrate (102); a detector (110) configured to detect light; a plurality of light propagating units (120) arranged integrated on the semiconductor substrate (102), wherein each light propagating unit (120) comprises: a waveguide (140) being a multimode waveguide configured to propagate the light through the waveguide (140) in dependence of wavelength such that a spatial distribution of the light at the distributing end (144) is dependent on wavelength of the light; wherein the waveguide (140) has a cross-section with an elongate shape, wherein the waveguides (140) of the plurality of light propagating units (120) are arranged with different orientations on the semiconductor substrate (102) such that the elongate shape of a first waveguide of a first light propagating unit is rotated in relation to the elongate shape of a second waveguide of a second light propagating unit.

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An electric field gradient focusing device (1) comprising: i. a fluidic channel (11) having an inlet (111) and an outlet (112) for a fluid, ii. a first actuation means configured for inducing a fluid flow in the fluidic channel (11) from the inlet (111) to the outlet (112) via AC electroosmosis, and iii. a second actuation means configured for generating a DC electric field gradient along at least part of the fluidic channel (11).

A charge sensor circuitry (110; 210; 310; 410) comprises: a detector element (112; 212; 312; 412) configured to generate a charge signal at an internal node (114; 214; 314; 414); wherein the charge sensor circuitry comprises a first transistor (118; 218; 318; 418) comprising a gate (122; 222; 322; 422) for receiving a first control signal and at least one second transistor (124, 126; 224, 226; 324; 424) comprising a first gate (128; 228; 328; 428) connected to the internal node and a second gate (130; 230; 330; 430) for receiving a second control signal; wherein the charge sensor circuitry is configured to, in a first mode, output a first output signal through the first transistor; wherein the charge sensor circuitry is configured to, in a second mode, reset the internal node through the first transistor and output a second output signal through the at least one second transistor.

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A device (1) comprising an ovonic threshold switch (2) formed of a mixture consisting of at least 0.90 parts by mole of a composition of three chemical elements consisting of 0.15 to 0.70 parts by mole of one or two chemical elements selected from Si, Ge, and Sn, 0.15 to 0.70 parts by mole of S, and optionally 0.05 to 0.45 parts by mole of one chemical element selected from N, Sb, and P, wherein each of the three chemical elements is present in an amount of at least 0.05 parts by mole, and at most 0.10 parts by mole of chemical elements different from said three chemical elements, wherein the parts by mole of the mixture add up to 1.00.

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The present invention provides a method for forming a contact (100) for a semiconductor device, the method comprising: forming a first layer (102) comprising at least one of: a silicon layer doped with phosphorus, Si:P layer; a silicon layer doped with antimony, Si:Sb layer; a silicon layer doped with arsenic, Si:As layer; forming a second layer (104) on top of the first layer (102), the second layer (104) comprising a silicon layer doped with phosphorus, Si:P layer, a phosphorus concentration of the second layer (104) being at least 4%; forming a third layer (106) on top of the second layer (104), the third layer (106) comprising scandium; forming a capping layer (108) above the third layer (106), the capping layer (108) being configured to prevent oxidation of the third layer (106); performing a first anneal. The present invention also provides a contact (100) for a semiconductor device.

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A force sensing device (100) comprises: a flexible substrate (102); a sensor unit (112) arranged thereon comprising: at least one first electrode (114a-d) in a first layer (116); at least one second electrode (120) in a second layer (122); wherein a plurality of first electrodes (114a-d) and/or second electrodes is provided; an intermediate structure (130) between the first and second electrodes for changing characteristics upon a force being received; trench(es) (140) in the second layer (122) partially surrounding the second electrode(s) (120), wherein bridging structure(s) (142) provides an anchoring position defining a fixed relation between the first and second layers (116; 122); a rigid projecting structure (150) projecting from the second layer (122) and connected to the second electrode(s) (120), wherein the rigid projecting structure (150) is embedded in an elastic material (152) for allowing the rigid projecting structure (150) to be tilted in relation to the first layer (116).

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According to an aspect there is provided a memory cell (10, 50). The memory cell (10, 50) comprises: a first (21, 61) and a second (22, 62) electrode; a spin-orbit-torque, SOT, layer (30, 70) comprising a first (31, 71) and a second (32, 72) electrode contact portion arranged in contact with the first (21, 61) and the second (22, 62) electrode, respectively, and an intermediate portion (33, 73) between the first and second electrode contact portions (31, 32, 71, 72); a first magnetic tunnel junction, MTJ, layer stack (41, 81) arranged in contact with the intermediate portion (33, 73); and a second MTJ layer stack (42, 82) arranged in contact with the first or second electrode contact portion (32, 72). A memory device (90) comprising such a memory cell (10, 50) and a method (100) for writing to such a memory cell (10, 50) are also provided.

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