ASML

There is provided a protective membrane for an exposure apparatus for semiconductor manufacturing processes, the protective membrane comprising a boron nitride nanotube core (203) and at least one containment layer (103) configured to contain particles (213) released from the core. Also provided is a component of an exposure apparatus for semiconductor manufacturing processes comprising such a protective membrane, as well as an exposure apparatus for semiconductor manufacturing processes comprising such a protective membrane or component. Also described is a method of manufacturing a protective membrane for an exposure apparatus for semiconductor manufacturing processes as well as a method of reconditioning a boron nitride nanotube protective membrane for an exposure apparatus for semiconductor manufacturing processes. Finally, the use of such a protective membrane, component, exposure apparatus or method in a semiconductor manufacturing process or apparatus therefor is also described.

An apparatus for positioning a charged particle relative to a target location of a substrate, the apparatus comprising: a positioning magnetic field generator configured to generate a positioning magnetic field such that the charged particle follows a curved trajectory within the positioning magnetic field; and a substrate support configured to rotate the substrate so as to control a velocity of the charged particle relative to the target location.

The present invention provides a potential corrector unit for use in a charged particle beam assessment apparatus 41 for assessing a sample 208. The potential corrector unit comprises a potential corrector 300 configured to influence an electric potential at a peripheral region of a surface of the sample. The potential corrector is disposed upbeam of the sample.

A computer-implemented method of processing first metrology data of a patterned portion of a substrate patterned using a wafer processing apparatus to generate predicted second metrology data of the, or another corresponding, patterned portion of the substrate, the first metrology data comprising metrology data from a first metrology domain which obtains metrology data using a first metrology process. The method comprises obtaining the first metrology data of the patterned portion of the substrate, and generating predicted second metrology data of the patterned portion of the substrate, or of the corresponding patterned portion of the substrate, based on the output of a first trained diffusion model conditioned on the first metrology data, the predicted second metrology data comprising predicted metrology data from a second metrology domain which obtains metrology data using a second metrology process.

The present invention provides a discharge damage mitigation unit for use in a charged particle beam assessment apparatus for projecting a beam of charged particles towards a sample. The discharge damage mitigation unit is configured for use in a high electric field environment. The discharge damage mitigation unit comprises one or more extension elements configured to receive a discharge from a high electric field element at a different electrical potential in the high electric field environment. Each extension element is arranged outside of a beam path region encompassing a beam path of the beam of charged particles. Each extension element is supported on a component of the charged particle beam assessment apparatus, wherein a distal region of the extension element is configured to protrude from a surface of the component.

There is provided a protective membrane (16) for an exposure apparatus (LA) for semiconductor manufacturing processes, the protective membrane (16) comprising boron nitride nanotubes. A component (15) of an exposure apparatus (LA) for semiconductor manufacturing processes comprising such protective membrane (16) is also described. Also provided is an exposure apparatus (LA) for semiconductor manufacturing processes comprising such a protective membrane (16) or component (15). Also described is the use of boron nitride nanotubes as a protective layer in semiconductor manufacturing processes or in an apparatus therefor.

Disclosed herein is a thermal barrier element for a lens element. The thermal barrier element comprises a foil arrangement to be laminated to an outer surface of the lens element, and one or more conductive wires embedded in the foil arrangement. The conductive wires form strain gauges. A resistance of the one or more conductive wires changes as the foil arrangement delaminates from said outer surface.

A safety mechanism for a patterning device of a lithographic apparatus, the safety mechanism comprising: a support structure configured to secure the patterning device on a support region of the support structure; and a plurality of magnetic elements located outwardly of the support region, wherein the magnetic elements are arranged such that magnetic force between the magnetic elements and complementary magnetic members fixed relative to the patterning device exerts a force on the patterning device towards the support structure.

Disclosed is a method of metrology comprising: illuminating a periodic structure with measurement illumination, the periodic structure comprising a pitch greater than 17 nm and detecting resultant scattered radiation comprising a plurality of diffraction orders. The measurement illumination comprises an illumination profile configured to either: substantially prevent overlap of the diffraction orders while providing a plurality of angles of incidence on the periodic structure which span a range greater than 10 degrees in at least one direction; or impose discontinuities in a measurement signal described by the scattered radiation as represented in pupil space, the discontinuities enabling the diffraction orders to be distinguished at least at respective locations in the pupil space of a plurality of illumination edges of the illumination profile.

A metrology system comprises: a substrate support; a sensor support; a plurality of position sensors; and a processor. The plurality of position sensors are supported by the sensor support and each one is operable to: project a radiation beam onto a substrate; receive a portion of the radiation beam scattered from a target on the substrate; and generate a measurement signal that is indicative of a position of the target relative to that position sensor. The processor is configured to: receive the measurement signal from each of the plurality of position sensors; and to combine the measurement signals from at least two different of the plurality of position sensors to at least partially correct at least one of the measurement signals for a position error so as to determine a corrected position of the target relative to the substrate support.