Shin-Etsu Chemical Patente

The purpose of the present invention is to provide a photomask blank with which a process for removing a hard mask film can be simplified and eventually a mask manufacturing process can be simplified. The photomask blank includes: a substrate; a patterning layer formed of a single layer or multiple layers on the substrate; and a hard mask film on the patterning layer. The hard mask film is made of a material containing chromium and at least one element selected from nitrogen, carbon, and oxygen, a film density of the hard mask film is 6.0 g/cm³ or less, the hard mask film has resistance to dry-etching using a gas containing fluorine and not containing oxygen, and resistance to dry-etching using a gas containing chlorine and not containing oxygen, and the photomask blank satisfies the following formula (1): d/v ≤ 60 [min] (1), wherein a film thickness reduction amount per minute of the hard mask film when processed with a sulfuric acid-hydrogen peroxide mixture is v [nm/min] and a film thickness of the hard mask film is d [nm].

A sprayed film including a film surface in which a value of an area ratio S/A obtained by dividing a surface area S (µm²) of a portion of the measurement surface (S-L surface) of the film surface within one evaluation region by an area A (µm²) of a portion of a reference surface forming a plane located at an arithmetic average height of the measurement surface (S-L surface), which is within the evaluation region is 1.75 or more and 3 or less, and a surface roughness Sa of a portion of the measurement surface (S-L surface) within the evaluation region is 0.4 µm or more and 8 µm or less.Generation of particles which is caused by cracks of the sprayed film can be reduced when dry etching using gas plasma is performed with a semiconductor manufacturing apparatus or the like using the sprayed film as a corrosion-resistant film.

A reflective photomask blank including a substrate, a multilayer reflection film, a protection film and a light absorbing film that has a phase shift function is provided. The light absorbing film contains ruthenium and chromium and is free of oxygen and nitrogen, and has a ruthenium content of 5 to 15 at%, a chromium content of 85 to 95 at%, a thickness of 40 to 56 nm, and a reflectance of 2 to 5% and a phase shift of 200 to 230 degrees with respect to exposure light being light in extreme ultraviolet range.

Provided is a method for producing a synthetic quartz glass substrate, including an evaluation step of evaluating a depth of a machining damaged layer at a machined surface of a synthetic quartz glass substrate, and a removal step of removing the machining damaged layer on the basis of a result of evaluation of the depth of the machining damaged layer. A machining damaged layer is removed on the basis of evaluation of the depth of the machining damaged layer at a machined surface. The machining damaged layer can be reliably and efficiently removed, and the productivity of a synthetic quartz glass substrate can be improved.

One of the purposes of the present invention is to provide a thermosetting resin composition with excellent adhesion to metals. A thermosetting resin composition, comprising the following components (A) to (D): (A) a thermosetting resin; (B) a silane coupling agent represented by the following formula (I): <img class="EMIRef" id="7f6add92-dc90-4b3b-a49f-a0a513967bf0-ia01" /> wherein, in formula (I), R<1> is, independently of each other, an alkyl group having 1 to 8 carbon atoms, m is an integer of 1 to 3, n is an integer of 0 to 10, Q is a single bond or an amide bond (-NHCO-), A is a nitrogen-containing heterocyclic group having at least two nitrogen atoms, wherein one of the nitrogen atoms is bonded to the carbon atom of -(CH<2>)<n>- or of -NHCO-; (C) a curing accelerator; and (D) an inorganic filler.

The present invention is a composition for forming a wafer-edge-protection film for forming a wafer-edge-protection film on a peripheral edge of a substrate, including a polymer (A) represented by the following general formula (1) and a solvent. In the formula (1), "W" represents -SO₂-, -C(=O)-, or -O-; R₁, R₂, R₃, R₄, and R₅ each independently represent a halogen atom, a monovalent organic group having 1 to 3 carbon atoms, or a hydroxy group; and "a", "b", "c", "d", and "e" each independently represent an integer of 0 to 4. This can provide a composition for forming a wafer-edge-protection film capable of providing a wafer-edge-protection film that can exhibit excellent dry etching resistance and excellent uniform coatablity, even on a wafer edge that is difficult to be coated.

A reflective photomask blank including a substrate, a multilayer reflection film, a protection film and a light absorbing film that has a phase shift function is provided. The light absorbing film contains ruthenium and chromium and is free of oxygen and nitrogen, and has a ruthenium content of 64 to 74 at%, a chromium content of 26 to 36 at%, a thickness of 40 to 44 nm, and a reflectance of 12 to 15% and a phase shift of 200 to 230 degrees with respect to exposure light being light in extreme ultraviolet range.

A reflective mask blank used in EUV lithography using EUV light as exposure light comprising at least a substrate 10; a multilayer reflective film 50 that is formed on the substrate 10 and reflects exposure light; and a multilayer film 200 containing tantalum (Ta). The multilayer film 200 has a TaN part 210, a TaO part 230, and a Ta part 220 provided between the TaN part 210 and the TaO part 230. A density of the Ta part 220 is higher than densities of the TaN part 210 and the TaO part 230. The density of the Ta part 220 is 13 g/cm<3> or more.

The present invention is a material for forming an organic film, containing: (A) a compound represented by the following general formula (1A); and (B) an organic solvent, where W₁ represents an n1-valent organic group, "n1" represents an integer of 2 to 4, X₁ represents a group represented by the following general formula (1B), "n2" represents 1 or 2, and R₁ represents any of groups represented by the following formulae (1C). This can provide: a compound for forming an organic film that cures under film formation conditions in an inert gas as well as in air, and makes it possible to form an organic film that is not only excellent in heat resistance and properties of filling and planarizing a pattern formed in a substrate, but also has favorable film-formability on and adhesiveness to a substrate; a material for forming an organic film, containing the compound; a substrate for manufacturing a semiconductor device including the material; a method for forming an organic film, using the material; a patterning process using the material; and an aromatic carboxylic anhydride having a crosslinkable moiety, expected to be an industrially useful raw material such as electronic materials and aerospace materials.

A continuous flow microfluidic system for continuous flow operation of a microfluidic chip, in which a pulsation rate of a continuous flow formed by the system is 5% or less. Even when a fluid sample is fed into a microfluidic chip at a high pressure, it is possible to satisfactorily and stably produce self-assembled substance particles such as lipid nanoparticles having high size uniformity, and it is possible to mass-produce such self-assembled substance particles.

A reflective mask blank including a substrate, a multilayer reflection film that is formed on the substrate and reflects exposure light, a protection film that is formed on the multilayer reflection film, and an absorber film that is formed in contact with the protection film and absorbs the exposure light is provided. The reflective mask blank is a material for a reflective mask used in EUV lithography using EUV light as the exposure light. The absorber film includes a main region that occupies not less than 94 % of a thickness of the absorber film, the main region consists of tantalum and nitrogen and is constituted of multiple layers that include at least one low nitrogen content layer having a nitrogen content of not more than 20 at%, and at least one high nitrogen content layer having a nitrogen content of 40 at% to 60 at%.

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …

Zusammenfassung wird geladen …