Shin-Etsu Chemical Patente

A chemically amplified positive resist composition is provided comprising a polymer comprising repeat units having a cyclic acetal structure fused to an aromatic ring and a photoacid generator capable of generating an arene sulfonic acid. The resist composition has a high solvent solubility, sensitivity and contrast, and improved lithography properties including resolution and LER as well as minimal development defects and etching resistance.

A reflective mask blank 100 has a substrate 1; a multilayer reflective film 2 that reflects exposure light and that is provided on one main surface of the substrate 1; and an absorber film 5 provided above the multilayer reflective film 2. The absorber film 5 contains one or both of ruthenium (Ru) and platinum (Pt), and further contains one or both of carbon (C) and silicon (Si). A surface of the absorber film 5 has a root mean square roughness (Sq) of 0.40 nm or less.

Provided is a heat-curable cyclic imide resin composition that provides a cured product having low relative permittivity, low dielectric loss tangent, excellent bonding properties, and, in particular, excellent desmear resistance. The heat-curable cyclic imide resin composition contains (A) an aromatic cyclic imide resin having a weight average molecular weight of 5,000 to 100,000, (B) an aliphatic cyclic imide resin having a weight average molecular weight of 100 to 2,000, (C) an epoxy resin containing two or more epoxy groups in one molecule, (D) an epoxy resin-curing agent, (E) an imidazole compound having a triazine frame, and (F) a hollow inorganic filler. The composition contains the components (A) to (E) in a total amount of 5 to 99% by mass of the whole composition.

A heat-curable maleimide resin composition is provided that gives a cured product having low relative permittivity, low dielectric loss tangent, and excellent bonding properties. The heat-curable maleimide resin composition includes (A) a maleimide resin solid at 25°C, (B) an epoxy resin containing two or more epoxy groups in one molecule, (C) an anionic polymerization initiator, and (D) a hollow inorganic filler.

A thermosetting maleimide resin composition for a stress-relief layer for a glass-core substrate includes a component (A) that is a maleimide compound having, in one molecule, one or more hydrocarbon groups derived from one or more skeletons selected from dimer diamine skeletons and trimer triamine skeletons, the component (A) being contained in an amount of 30% to 99% by mass based on the total composition; a component (B) that is an epoxy resin having two or more epoxy groups in one molecule, the component (B) being contained in an amount of 0.05 to 25 parts by mass per 100 parts by mass of the component (A); and a component (C) that is an anionic polymerization initiator, the component (C) being contained in an amount of 0.1 to 5 parts by mass per 100 parts by mass of the total of the components (A) and (B).

The present invention is a silicon-containing composition, containing: (A) a thermosetting silicon-containing resin having a weight-average molecular weight of 1,000 to 3,000; (B) a polymer having one or both of repeating units represented by the following general formulae (1) and (2); and (C) a solvent. This can provide: a silicon-containing composition excellent in properties of forming a film in and filling a pattern of a stepped substrate; and a patterning process using the silicon-containing composition. The present invention can also provide a silicon-containing composition that can minimize the effect on the human body and the environment by the use of a surfactant to which the PFAS regulations of the European REACH do not apply.

The present invention is a silicon-containing composition, containing: (A) a thermosetting silicon-containing resin having a weight-average molecular weight of 1,000 to 3,000; (B) a polymer containing, in a repeating unit, an aromatic group that contains a pentafluorosulfanyl group (an SF₅ group); and (C) a solvent. This can provide: a silicon-containing composition excellent in properties of forming a film in and filling a pattern of a stepped substrate; and a patterning process using the silicon-containing composition. The present invention can also provide, as the silicon-containing composition, one that can minimize the effect on the human body and the environment.

Provided is a curable resin composition including: (A) cyclic imide resins represented by the following formula (1): <img class="EMIRef" id="d74ae674-f241-435d-bfc4-de2c339d3b80-ia01" /> wherein, in the formula (1), A represents a tetravalent organic group including a cyclic structure, Q is, for example, a divalent aliphatic hydrocarbon group, B represents an arylene group, X represents a hydrogen atom or a methyl group, and n and m are independently 0 to 200; and (B) a curing catalyst, wherein the composition exhibits a minimum complex viscosity at 40 to 150°C of (α) 100 to 10,000 Pa·s (as measured at 1 Hz frequency) and (β) 10 to 2,000 Pa·s (as measured at 2 Hz frequency), and results in a cured product that satisfies (γ) a die shear strength with glass at 25°C of 10 MPa or more, and (δ) a die shear strength with copper at 25°C of 10 MPa or more.

An onium salt in which 2, 3 or 4 aryl groups having an acid labile group of ether form are present on an aromatic ring having -SO<3>- bonded thereto, and at least one aryl group having an ether type acid labile group is bonded to a carbon atom adjoining the carbon atom to which -SO<3>- is bonded generates an arenesulfonic acid with adequate acidity and controlled diffusion. A chemically amplified positive resist composition comprising the onium salt has a high resolution and forms a pattern of rectangular profile with reduced LER and few development defects.

A sprayed film including a film surface in which a value of an area ratio S/A obtained by dividing a surface area S (µm²) of a portion of the measurement surface (S-L surface) of the film surface within one evaluation region by an area A (µm²) of a portion of a reference surface forming a plane located at an arithmetic average height of the measurement surface (S-L surface), which is within the evaluation region is 1.75 or more and 3 or less, and a surface roughness Sa of a portion of the measurement surface (S-L surface) within the evaluation region is 0.4 µm or more and 8 µm or less.Generation of particles which is caused by cracks of the sprayed film can be reduced when dry etching using gas plasma is performed with a semiconductor manufacturing apparatus or the like using the sprayed film as a corrosion-resistant film.

The purpose of the present invention is to provide a photomask blank with which a process for removing a hard mask film can be simplified and eventually a mask manufacturing process can be simplified. The photomask blank includes: a substrate; a patterning layer formed of a single layer or multiple layers on the substrate; and a hard mask film on the patterning layer. The hard mask film is made of a material containing chromium and at least one element selected from nitrogen, carbon, and oxygen, a film density of the hard mask film is 6.0 g/cm³ or less, the hard mask film has resistance to dry-etching using a gas containing fluorine and not containing oxygen, and resistance to dry-etching using a gas containing chlorine and not containing oxygen, and the photomask blank satisfies the following formula (1): d/v ≤ 60 [min] (1), wherein a film thickness reduction amount per minute of the hard mask film when processed with a sulfuric acid-hydrogen peroxide mixture is v [nm/min] and a film thickness of the hard mask film is d [nm].

A method for producing a glass strand, the method including: (1) a drawing step of drawing raw filaments composed of a glass composition containing SiO<2> in a compositional amount of 90% by mass or more into glass fibers under conditions of a melting temperature of 1,500 to 3,500°C and a tension of 0.1 to 1.0 cN per filament; and (2) a bundling step of bundling 30 to 400 of the glass fibers obtained in the drawing step to produce a glass strand. This can provide a method for producing a glass strand in which the occurrence of thread breakage during drawing into glass fibers is reduced, and a method for producing a glass yarn in which the occurrence of thread breakage or fuzzing during thread twisting is reduced and a variation in quality is small between the beginning part and end part of winding in a long-length glass yarn.

An onium salt in which an aromatic ring having a sulfo group bonded thereto and another aromatic ring structure containing a bulky substituent group are linked via a sulfonamide bond generates an aromatic sulfonic acid with adequate acidity and controlled diffusion. A chemically amplified positive resist composition comprising the onium salt has a high resolution and forms a pattern of rectangular profile with reduced LER.

An onium salt in which an aromatic ring having a sulfo group bonded thereto and another aromatic ring structure containing a bulky substituent group are linked via a sulfonamide bond generates an aromatic sulfonic acid with adequate acidity and controlled diffusion. When a chemically amplified negative resist composition comprising the onium salt as an acid generator and a polymer is processed by lithography, a pattern with improved resolution, reduced LER and satisfactory fidelity is obtainable.

A reflective photomask blank including a substrate, a multilayer reflection film, a protection film and a light absorbing film that has a phase shift function is provided. The light absorbing film contains ruthenium and chromium and is free of oxygen and nitrogen, and has a ruthenium content of 5 to 15 at%, a chromium content of 85 to 95 at%, a thickness of 40 to 56 nm, and a reflectance of 2 to 5% and a phase shift of 200 to 230 degrees with respect to exposure light being light in extreme ultraviolet range.

Provided is a method for producing a synthetic quartz glass substrate, including an evaluation step of evaluating a depth of a machining damaged layer at a machined surface of a synthetic quartz glass substrate, and a removal step of removing the machining damaged layer on the basis of a result of evaluation of the depth of the machining damaged layer. A machining damaged layer is removed on the basis of evaluation of the depth of the machining damaged layer at a machined surface. The machining damaged layer can be reliably and efficiently removed, and the productivity of a synthetic quartz glass substrate can be improved.

One of the purposes of the present invention is to provide a thermosetting resin composition with excellent adhesion to metals. A thermosetting resin composition, comprising the following components (A) to (D): (A) a thermosetting resin; (B) a silane coupling agent represented by the following formula (I): <img class="EMIRef" id="7f6add92-dc90-4b3b-a49f-a0a513967bf0-ia01" /> wherein, in formula (I), R<1> is, independently of each other, an alkyl group having 1 to 8 carbon atoms, m is an integer of 1 to 3, n is an integer of 0 to 10, Q is a single bond or an amide bond (-NHCO-), A is a nitrogen-containing heterocyclic group having at least two nitrogen atoms, wherein one of the nitrogen atoms is bonded to the carbon atom of -(CH<2>)<n>- or of -NHCO-; (C) a curing accelerator; and (D) an inorganic filler.

A reflective photomask blank including a substrate, a multilayer reflection film, a protection film and a light absorbing film that has a phase shift function is provided. The light absorbing film contains ruthenium and chromium and is free of oxygen and nitrogen, and has a ruthenium content of 64 to 74 at%, a chromium content of 26 to 36 at%, a thickness of 40 to 44 nm, and a reflectance of 12 to 15% and a phase shift of 200 to 230 degrees with respect to exposure light being light in extreme ultraviolet range.

The present invention is a composition for forming a wafer-edge-protection film for forming a wafer-edge-protection film on a peripheral edge of a substrate, including a polymer (A) represented by the following general formula (1) and a solvent. In the formula (1), "W" represents -SO₂-, -C(=O)-, or -O-; R₁, R₂, R₃, R₄, and R₅ each independently represent a halogen atom, a monovalent organic group having 1 to 3 carbon atoms, or a hydroxy group; and "a", "b", "c", "d", and "e" each independently represent an integer of 0 to 4. This can provide a composition for forming a wafer-edge-protection film capable of providing a wafer-edge-protection film that can exhibit excellent dry etching resistance and excellent uniform coatablity, even on a wafer edge that is difficult to be coated.

A reflective mask blank used in EUV lithography using EUV light as exposure light comprising at least a substrate 10; a multilayer reflective film 50 that is formed on the substrate 10 and reflects exposure light; and a multilayer film 200 containing tantalum (Ta). The multilayer film 200 has a TaN part 210, a TaO part 230, and a Ta part 220 provided between the TaN part 210 and the TaO part 230. A density of the Ta part 220 is higher than densities of the TaN part 210 and the TaO part 230. The density of the Ta part 220 is 13 g/cm<3> or more.

The present invention is a material for forming an organic film, containing: (A) a compound represented by the following general formula (1A); and (B) an organic solvent, where W₁ represents an n1-valent organic group, "n1" represents an integer of 2 to 4, X₁ represents a group represented by the following general formula (1B), "n2" represents 1 or 2, and R₁ represents any of groups represented by the following formulae (1C). This can provide: a compound for forming an organic film that cures under film formation conditions in an inert gas as well as in air, and makes it possible to form an organic film that is not only excellent in heat resistance and properties of filling and planarizing a pattern formed in a substrate, but also has favorable film-formability on and adhesiveness to a substrate; a material for forming an organic film, containing the compound; a substrate for manufacturing a semiconductor device including the material; a method for forming an organic film, using the material; a patterning process using the material; and an aromatic carboxylic anhydride having a crosslinkable moiety, expected to be an industrially useful raw material such as electronic materials and aerospace materials.

A reflective mask blank having auxiliary marks that can be formed with a simple structure and little risk of particle generation in a reference mark is provided. A reflective mask blank including at least a substrate, a multilayer reflective film provided on the substrate and reflecting exposure light, and an absorber film provided on the multilayer reflective film and absorbing the exposure light, in which the reflective mask blank further includes a reference mark formed on a surface on a same side as the multilayer reflective film of the reflective mask blank, the reference mark consists of a main mark serving as a reference position for a defect position, and an auxiliary mark group disposed around the main mark, the auxiliary mark group consists of a plurality of auxiliary marks formed at intervals from one another to extend in at least one direction starting from the main mark, and the plurality of auxiliary marks are all formed in a same shape and in a same orientation.

The present invention is a PBN container including a container body made of a laminate of pyrolytic boron nitride, and a conductive film coating a surface of the container body, in which an angle θ between a cut face of the container body and an inner wall surface or an outer wall surface of the container body adjacent to the cut face is 20° or more and 80° or less across an entire circumference of an aperture of the container body, and a tip portion of the aperture of the container body has a shape having a curvature radius R of 0.2 mm or more and 3.0 mm or less across the entire circumference of the aperture of the container body. This provides the PBN container excellent in durability where the conductive film is laminated on a surface of the container body formed by depositing PBN, and the method for producing such a PBN container.

A continuous flow microfluidic system for continuous flow operation of a microfluidic chip, in which a pulsation rate of a continuous flow formed by the system is 5% or less. Even when a fluid sample is fed into a microfluidic chip at a high pressure, it is possible to satisfactorily and stably produce self-assembled substance particles such as lipid nanoparticles having high size uniformity, and it is possible to mass-produce such self-assembled substance particles.

A reflective mask blank including a substrate, a multilayer reflection film that is formed on the substrate and reflects exposure light, a protection film that is formed on the multilayer reflection film, and an absorber film that is formed in contact with the protection film and absorbs the exposure light is provided. The reflective mask blank is a material for a reflective mask used in EUV lithography using EUV light as the exposure light. The absorber film includes a main region that occupies not less than 94 % of a thickness of the absorber film, the main region consists of tantalum and nitrogen and is constituted of multiple layers that include at least one low nitrogen content layer having a nitrogen content of not more than 20 at%, and at least one high nitrogen content layer having a nitrogen content of 40 at% to 60 at%.

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A rubber compounding ingredient containing (A) a compound having a blocked isocyanate group and a hydrolyzable silyl group, such as an organosilicon compound having the following formula (1):wherein R¹ is each independently an alkyl group having 1 to 8 carbon atoms, L is a divalent linking group, X is -O- or -NR²-, Z is a hydrogen atom or a monovalent organic group, R² is a hydrogen atom, an alkyl group having 1 to 8 carbon atoms, or a group capable of bonding to Z to form a ring structure, and m is an integer of 1 to 3.

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