imec Patente

A method for monitoring a monitor material of a process, such as a manufacturing process, comprises: detecting (204) a suspicious particle (122) in a sample of the monitor material using an imaging system (114) configured to image the sample using illumination light from a light source (116) and to detect an interference pattern based on object light having interacted with the sample and reference light of the illumination light; selectively diverting (208) the suspicious particle (122) from a flow of the sample to an analysis flow; activating (210) a nucleic acid test (NAT) device (160), wherein said activating is triggered based on detecting of the suspicious particle (122) in the sample; receiving (214) by the NAT device (160) the analysis flow comprising the suspicious particle (122); and subjecting (220) the suspicious particle (122) to a NAT analysis.Also, an apparatus for monitoring a monitor material is provided.

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A light sensor (100) for spectrally resolved light detection, said light sensor (100) comprises: an upper reflective element (104); a lower reflective element (106); a photo-sensitive element (114) therebetween; a spacer element (108), configured to form the lower reflective element (106) or configured to be arranged between the upper (104) and the lower reflective element (106); wherein the elements form a stack of layers which define a resonance structure (102a, 102b, 102c) between the upper (104) and the lower reflective element (106) for providing a resonance of light; wherein the spacer element (108) comprises at least two different materials (110, 112), a distribution of which is different between different pixels in an array of pixels such that a resonance wavelength is different for different pixels; and wherein for a plurality of pixels, geometrical structures smaller than the resonance wavelength are defined by the at least two different materials (110, 112).

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According to the method of the invention, a trench (10) is formed in a semiconductor layer (1) of a device wafer for the fabrication of ICs, followed by the deposition of a liner (11) on the sidewalls of the trench. The liner is removed from the bottom of the trench, and the trench may be deepened anisotropically to form an extension (12) of the trench. This may be done along the full length of the trench, or locally by applying a mask. An etch process is then applied wherein the semiconductor material is removed outwardly from the extension, thereby creating a cavity (13) that is wider than the trench. The etch process is selective relative to the liner (11), so that the cavity is formed essentially below the liner (11). Then the combined space formed by the trench and the cavity is filled with an electrically conductive material, possibly after forming a second liner (14). This results in the formation of a buried interconnect rail (15) comprising a narrow portion (15a) in the area of the trench and a wider portion (15b) in the area of the cavity. The wider portion may be contacted from the back side of the semiconductor layer by a TSV connection (24), enabling a large contact area between said TSV connection and the buried rail. The selectivity of the etch process applied for forming the cavity (13) results in the formation of the cavity (13) and thereby of the wider rail portion (15b) at a location that is remote from the active devices formed on the front surface of the semiconductor layer (1).

A device (1) comprising an ovonic threshold switch (2) formed of a mixture consisting of at least 0.90 parts by mole of a composition of three or four chemical elements consisting of 0.20 to 0.70 parts by mole of Si, 0.05 to 0.60 parts by mole of Te, and 0.05 to 0.60 parts by mole of S and/or P, and at most 0.10 parts by mole of optional other chemical elements, wherein the parts by mole of the mixture add up to 1.00.

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The disclosure relates to a capacitive memory structure (10), comprising: a substrate (11); a first metallic layer (12) on the substrate; a ferroelectric material layer (13) on the first metallic layer (12); wherein the ferroelectric material layer (13) is electrically excitable to two polarization states, each polarization state representing a memory state of the capacitive memory structure (10). The capacitive memory structure (10) further comprises a second metallic layer (14) on the ferroelectric material layer (13); wherein the first metallic layer (12) and the second metallic layer (14) have different work functions.

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According to an aspect of the present inventive concept there is provided an imaging device for holographic imaging of a sample, the imaging device comprising a light source generating a light beam, a beam splitter splitting the light beam into an object beam along an object beam path and a reference beam along a reference beam path, and a detector.The imaging device defines a sample position.The object beam is propagated through the sample position, and the detector is arranged to prevent non-scattered object light, passing through the sample position without being scattered by the sample, from being incident onto the detector.The reference beam is propagated through the sample position, and the detector is arranged so that non-scattered reference light, passing through the sample position without being scattered by the sample, is incident onto the detector.The detector detects an interference pattern formed by scattered object light, scattered by the sample, and the non-scattered reference light.

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According to an aspect of the present inventive concept there is provided a sensor head for measurement of a biological material, the sensor head comprising: a substrate comprising: a plurality of sensors arranged in a sensor area at a surface of the substrate; electrical conductors connecting the plurality of sensors to contacts, wherein the electrical conductors are extending from the sensor area along the surface of the substrate to the contacts; a cap comprising a protective element for providing protection from the biological material, the protective element comprising: a first surface and a second surface opposite to the first surface; walls extending from the first surface to the second surface, defining an opening through the protective element; wherein the second surface of the protective element, around the walls of the protective element, is sealed to the surface of the substrate at a position between the sensor area and the contacts such that the opening of the protective element is arranged above the sensor area for allowing the plurality of sensors to be exposed to the biological material.

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This disclosure relates to a 3D magnetic memory device (10). The device comprises a stack (11) with a plurality of dielectric layers (11a) and silicon-based layers (11b) alternatingly arranged one on the other. A magnetic material channel (12) is formed through the stack and extends through each layer of the stack. The channel has a first diameter where it extends through a silicon-based layer and a second diameter where it extends through a dielectric layer. A plurality of pinning sites defined by the layers of the stack is formed in the channel, each pinning site being configured to store one magnetic bit. The device further comprises a first metallic layer (13) arranged on a first end of the channel and on the last layer of the stack, a magnetic tunnel junction (MTJ) (14) arranged on the first metallic layer, and a first electrode (15) arranged on the first metallic layer at a distance to the MTJ. In addition, either the first metallic layer is configured as a spin-orbit-torque (SOT) track, or the device comprises a second metallic layer (16) configured as a SOT track. In the latter case, a second end of the channel and the first layer of the stack are arranged on the second metallic layer.

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A system (100) for determining contact with an object (102) or a fluid (108) comprises: a sensor (110) comprising an electrically conductive structure (112), wherein the sensor (110) is configured to induce a current through the electrically conductive structure (112) and sense a temperature-induced change in resistance of the electrically conductive structure (112) for determining contact information, wherein the temperature-induced change in resistance is dependent on heat exchange with the electrically conductive structure (112) and an environment; a processor unit (120) configured to receive the sensed temperature-induced change in resistance and being configured to process the sensed temperature-induced change in resistance for determining contact information between the sensor (110) and the object (102) or the fluid (108).

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