Shin-Etsu Handotai Patente

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The present invention is a method for evaluating crystallinity of a 3C-SiC film heteroepitaxially grown on a single-crystal silicon substrate, in which crystallinity of the 3C-SiC film of a heteroepitaxial wafer is determined from a stress value for the substrate, which is obtained by employing a WARP value of the heteroepitaxial wafer and Stoney's equation. This provides the method for evaluating crystallinity of the 3C-SiC film heteroepitaxially grown on the single-crystal silicon substrate without requiring any wafer processing operations in a simple and non-destructive manner.

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The present invention is a method for inspecting a pinhole and a degassing failure in a bag body hermetically packaging a sealed storage container, in a state where the sealed storage container storing a semiconductor wafer is hermetically packaged in a degassed state with a resin bag body or an aluminum-vapor-deposited bag body so as to prevent exposure of the sealed storage container to outside air, to inspect presence or absence of the pinhole and presence or absence of the degassing failure in the bag body, the method including the steps of pressurizing, after a predetermined period or longer has elapsed following the hermetic packaging, at least one side surface among side surface portions of the bag body, which hermetically packages the sealed storage container, with a pad, measuring, by employing a sensor provided above an upper end portion of the bag body, which hermetically packages the sealed storage container, a distance between the upper end portion and the sensor in a state pressurized in the step of pressurizing, and determining, based on the distance measured in the step of measuring, the presence or absence of the pinhole and the presence or absence of the degassing failure in the bag body. This provides a method for inspecting, in which a simple method without relying on an inspector enables the determination of the presence or absence of the pinhole and the presence or absence of the degassing failure in the bag body, which hermetically packages the sealed storage container.

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The present invention is directed to a silicon single-crystal substrate having a plane orientation of (110), in which a surface of the silicon single-crystal substrate in a room temperature environment has a surface stable structure 1×1. This provides a silicon single-crystal substrate that has reduced haze of the silicon (110) substrate and thus has a stable surface structure, and a method for manufacturing the silicon single-crystal substrate.

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The present invention is an SOI wafer including, in this order, a silicon epitaxial film having a carbon concentration of 2×10<19> atoms/cm<3> or more and less than 3×10<20> atoms/cm<3> and containing carbon defects, a dielectric layer, and a silicon single crystal film on a silicon single crystal substrate having a resistivity of 10 Ω·cm or more and 5000 Ω·cm or less, in which a thickness of the silicon epitaxial film satisfies 6.6 × 10<20> × exp{-1.6 × [the thickness of the epitaxial film (µm)]} > [the carbon concentration of the epitaxial film (atoms/cm<3>) ]. This provides the SOI wafer employing an epitaxial wafer having the silicon epitaxial film containing a high concentration of carbon formed on a standard resistivity substrate, the SOI wafer having superior harmonic reduction capability compared with a conventional SOI wafer that employs a polysilicon layer as a trap-rich layer, and being excellent in terms of ease of processing for use as a substrate for a high-frequency integrated circuit, as well as a method for manufacturing the same.

The present invention is an epitaxial wafer including, in this order, a silicon epitaxial film having a carbon concentration of 2×10<19> atoms/cm<3> or more and less than 3×10<20> atoms/cm<3> and containing carbon defects and a dielectric layer on a silicon single crystal substrate having a resistivity of 10 Ω·cm or more and 5000 Ω·cm or less, in which a thickness of the silicon epitaxial film satisfies 6.6 × 10<20> × exp{-1.6 × [the thickness of the epitaxial film (µm)]} > [the carbon concentration of the epitaxial film (atoms/cm<3>)]. This provides the silicon epitaxial wafer in which the silicon epitaxial film is formed on a standard-resistivity silicon substrate, the silicon epitaxial wafer having superior capability of reducing harmonics, and excellent processability for use as a substrate for a high-frequency integrated circuit, and further provides the method for manufacturing the same.

The present invention is a method for manufacturing an epitaxial wafer by forming a single-crystal silicon layer on a single-crystal silicon wafer via an oxygen-atom layer, the method including the steps of removing a native oxide film, forming a thermal oxide film on a surface of the single-crystal silicon wafer from which the native oxide film has been removed, thinning the thermal oxide film, and after thinning the thermal oxide film, epitaxially growing single-crystal silicon to form an epitaxial wafer in which the single-crystal silicon layer is formed on the single-crystal silicon wafer via the oxygen-atom layer. This provides the method for manufacturing an epitaxial wafer, in which, when manufacturing a silicon epitaxial wafer, the oxygen-atom layer can be introduced into an epitaxial layer stably and easily.

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The present invention is a cleaning treatment apparatus 1 including a horn-type ultrasonic generator 5 that propagates ultrasonic waves to a cleaning liquid supplied to a polishing pad 109 of a polishing apparatus 100, the polishing apparatus 100 including a lower turn table 101, a sun gear 105 provided on an inside of the lower turn table 101, and an internal gear 107 provided on an outside of the lower turn table 101, the polishing pad 109 being attached to an upper surface of the lower turn table 101, in which the cleaning treatment apparatus 1 includes a rail 3 that is fixed on the sun gear 105 and the internal gear 107 across the lower turn table 101 and on which the ultrasonic generator 5 is mounted, the ultrasonic generator 5 is able to move on the rail 3, and the ultrasonic generator 5 generates ultrasonic waves by a horn 23 while moving on the rail 3, and performs the ultrasonic cleaning by propagating ultrasonic waves to the polishing pad 109 through the cleaning liquid. Thereby, a cleaning treatment apparatus that allows the ultrasonic cleaning while maintaining the interval between the horn and the polishing pad with high accuracy, even in the case where the horn-type ultrasonic generator is included is provided.

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The present invention is a method for producing a GaN epitaxial film, the method including the steps of providing a support substrate having a diameter of 150 mm or more and a thickness of less than 1 mm, in which the support substrate includes a core composed of nitride ceramic enclosed by an encapsulating layer, producing a substrate in which a planarization layer and a seed crystal layer composed of SiC single crystal are sequentially laminated on the support substrate to obtain a substrate for epitaxial growth, and epitaxially growing a GaN epitaxial film having a thickness of 7 µm or more on the substrate for epitaxial growth, by which the GaN epitaxial film having a dislocation density of 1.0×10⁶ / cm² or less is produced. This provides the method for producing a thick GaN film having a dislocation density of 1.0×10⁶ / cm² or less, in which the film has a large diameter without warping and cracking at low cost using a simple process.

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