ASML Patente

The invention provides a substrate support assembly configured to support a substrate, the substrate support assembly comprising: a support table configured to support the substrate in a support plane, the support table having a top surface facing the substrate and a bottom surface opposite to the top surface, the support plane being parallel to the top surface of the support table, the support table comprising a plurality of bottom burls at the bottom surface, a support configured to clamp the substrate to the support table, wherein the support table is held within a recess provided in the support, the plurality of bottom burls facing a base of the recess, an actuator assembly comprising one or more actuators arranged in the recess and configured to move the support table relative to the support in a transverse direction with respect to the support plane.

A fluid handling structure configured to confine immersion liquid to an immersion space and comprising: a liquid supply opening to supply immersion liquid to the immersion space; a extraction opening outwards of the liquid supply opening to extract fluid from the immersion space; a gas supply opening outwards of the fluid extraction opening to supply a soluble gas to the vicinity of the immersion space; and a gas extraction opening outwards of the gas supply opening to extract gas from the vicinity of the immersion space; wherein the bottom surface has: an outer portion outward of the gas extraction opening, the outer portion facing the substrate in use and separated from the substrate by a first distance; and a barrier projecting toward the substrate by a second distance, the second distance being in the range of from 40% to 99% of the first distance.

A method of forming a feature on a substrate. The method comprises performing an exposure process comprising projecting an image of the feature in the vicinity of the substrate. The method comprises adjusting a focal position of the image relative to a top surface of the substrate during the exposure process. The method comprises adjusting an intensity of the image during the exposure process.

A method of exposing a substrate to a patterned radiation beam, the method comprising: providing a patterning device for a multi-field exposure, the patterning device having at least two identical patterns arranged thereon in a scanning direction; determining at least one process control parameter; determining an exposure layout for the substrate based on the at least one process control parameter; and exposing the substrate according to the exposure layout.

A linkage for an actuator is discloses, which comprises: a first portion; a second portion; and a hinge, wherein the first portion is connected to the second portion via the hinge. The hinge comprises at least one hinge portion. The or each hinge portion comprises a plurality of blade flexures extending from a first rigid body portion to a second rigid body portion. The plurality of blade flexures are generally mutually parallel. At least two of the plurality of blade flexures have different lengths in a direction extending between the first rigid body portion and the second rigid body portion. An actuator comprising such a linkage is also disclosed. The actuator may comprise a micro-electromechanical system (MEMS).

A position measurement system is disclosed, comprising an interferometer system, a multimode optical fiber, and a processing unit. The interferometer system is configured to measure a position along an optical path, to output a position measurement signal representative of the position into the multimode optical fiber, which produces at its output a spatial intensity profile. One or more detectors detect the spatial intensity profile, each detector comprising a plurality of pixels, each pixel corresponding to a distinct spatial region of the spatial intensity profile. The processing unit analyses each distinct spatial region and performs a mathematical analysis between a plurality of distinct spatial regions to determine one or more properties related to mode dispersion of the position measurement signal. Based on the determined properties, the processing unit identifies disturbances and/or errors in the position measurement signal.

A substrate exposure method comprising performing, using an exposure apparatus, at least two processes simultaneously. Each process involves an activation of a respective actuator of the exposure apparatus, the method comprises in a first phase: determining, for each process, if the process is time critical or non-time critical, determining an acceleration parameter for each actuator, comprising: reducing the acceleration parameter to a value lower than a respective maximum if the process is non-time critical. In a second phase an acceleration time profile for each actuator is adjusted using the determined acceleration parameter for the respective actuator; In a third phase the at least two processes are performed by the exposure apparatus, using the adjusted acceleration time profile for each actuator.

A method of determining values for a plurality of lithographic apparatus settings for a lithographic apparatus to perform a lithographic process over a plurality of exposure fields on a substrate is described. The method comprises, for each of a plurality of subsets of the plurality of exposure fields: optimizing the values for the plurality of lithographic apparatus settings over a set number of simulation runs, wherein each of the simulation runs after a first simulation run comprises performing a simulation of the lithographic process based on values for the lithographic apparatus settings determined in an immediately preceding simulation run of the number of simulation runs, the first simulation run comprising performing the simulation of the lithographic process based on initial values for the lithographic apparatus settings.

The present disclosure provides a stage system for supporting a substrate having a thickness exceeding a nominal range, comprising: a base surface; a first module movably arranged on the base surface; a second module for supporting the substrate and movably arranged on the first module; a plane of interest extending planar to a top surface of the second module at a position on or above said top surface; height adjustment means for adjusting vertical positions of the first module and the second module; and a controller configured to control relative distances between the base surface, the first module, the second module, and the plane of interest, while keeping a summation of the relative distances constant.

The invention provides a flexible supply structure configured to transfer supplies between a first object and a second object, wherein the first object is movable with respect to the second object,wherein a first supply structure end of the flexible supply structure is connected to the first object and a second supply structure end of the flexible supply structure is connected to the second object,wherein the flexible supply structure is configured to bend about a bending axis,wherein the flexible supply structure comprises:a cable slab having one or more supply hoses and/or supply cables, the cable slab having a cable slab width and a cable slab thickness,at least one flexible shield element arranged along the cable slab to shield one or more sides of the cable slab, the shield element having a shield element thickness, wherein the shield element thickness is smaller than the cable slab thickness.

A method of maintenance for a multilayer optical component. The multilayer optical component is configured for use with a lithographic process and comprises at least a first layer and a second layer adjacent to the first layer. The method comprises irradiating, with first ions, a region of the first layer such that particles are ejected from the first layer. The first ions have an energy at or above a sputter threshold of the first layer and the energy is below a sputter threshold of the second layer.

A bonding tool comprises: a frame; a stage coupled to the frame, wherein the stage comprises a movable member configured to move relative to the frame such that an actuation force applied to the movable member causes a reaction force; and a balance mechanism configured to at least partly counteract the reaction force caused by the actuation force applied to the movable member.

A piezo motor system comprises a first piezo (P1), a second piezo (P2), and a controller (CON). The first piezo (P1) is configured to exert a first piezo force in a first direction. The second piezo (P2) is configured to exert a second piezo force in a second direction. The second direction is different from the first direction. One of the first piezo (P1) and the second piezo (P2) is configured to actuate the other one of the first piezo (P1) and the second piezo (P2) and the other one of the first piezo (P1) and the second piezo (P2) is configured to actuate the object (OBJ).The controller (CON) is configured to detect from the first piezo (P1) an electric signal representative of a force on the first piezo (P1) in the second direction, and apply damping control for the piezo motor system using the second piezo (P2) based on the detected electric signal.

A stage for die placement comprises: a support member; a movable member that is movable relative to the support member, wherein the movable member is configured to hold at least one die; and an actuator configured, on actuation, to move the movable member relative to the support member so as to flip the die and move the die along a die path to place the die on an acceptor substrate, wherein the stage is arranged such that the die path extends further in a direction perpendicular to a plane of the acceptor substrate than in a direction parallel to the plane of the acceptor substrate.

A bonding tool is configured to bond a first substrate to a second substrate. The bonding tool comprises a measurement system. The measurement system is configured to measure a distance to a surface of at least one of the first substrate and the second substrate. The measurement system comprises at least one optical fiber and a radiation source. The at least one optical fiber has a distal end distanced from the surface so as to form an optical cavity of a Fabry-Pérot interferometer between the respective distal ends and the surface. The radiation source is configured to provide interrogation radiation of different wavelengths to the at least one optical fibers.

A method for applying a conductive coating to a component of a lithographic apparatus, comprising: providing a carrier member in the lithographic apparatus, wherein a precursor material is disposed on the carrier member facing the component, heating the carrier member to form a vapor of the precursor material, condensing the precursor vapor onto the component to form the conductive coating.

A stage for die placement comprises a support member; a movable member that is movable relative to the support member, wherein the movable member is configured to hold at least one die; and an actuator configured, on actuation, to move the movable member relative to the support member in six degrees of freedom.

There is provided a microelectromechanical system (MEMS) comprising two surfaces, wherein at least a portion of one of the surfaces has a coating comprising an etch resistant layer. Also described is an optical element for semiconductor manufacturing processes comprising such a system, as well as an exposure apparatus for semiconductor manufacturing processes comprising such a system or optical element. Further describes is a the use of such system, optical element or exposure apparatus, as well as a method of coating a silicon-based surface of a MEMS device with a metal silicate layer, and a method of manufacturing a MEMS device.

There is provided a method of determining a correction for at least one first substrate and/or a second substrate, the correction being defined across an exposure field on at least one first substrate, wherein the exposure field comprises multiple sub-field portions, wherein each sub-field portion is to be bonded to a second substrate to obtain a bonded substrate in a bonding process, the method comprising: obtaining a first component of parameter of interest data relating to a parameter of interest which is common to each sub-field portion of the said multiple sub-field portions; and determining the correction based on suppression of the first component for each sub-field portion of the multiple sub-field portions.

Methods, targets, and apparatus for measuring an etch depth of a structure on a substrate. A substrate is provided, comprising the structure and a etch-sensitive target configured to have an asymmetric response to a etch. An etch of the substrate is performed, thereby affecting an asymmetry in the etch-sensitive target. The etch-sensitive target is measured, using radiation, to quantify the asymmetry, and the quantified asymmetry is mapped to the etch depth based on predetermined etch reference values.

The present disclosure relates to a method of bonding a first semiconductor substrate and a second semiconductor substrate. The method may comprise clamping the first semiconductor substrate to a clamp such that the first semiconductor substrate is supported by a plurality of support protrusions on the clamp. The method may further comprise, applying a force to the first semiconductor substrate to initiate the bonding of the first semiconductor substrate and the second semiconductor substrate. The force may be generated by, or transmitted by, the plurality of support protrusions on the clamp. The applying of the force to the first semiconductor substrate to initiate the bonding of the first semiconductor substrate and the second semiconductor substrate may simultaneously initiate a plurality of bond fronts.

The present disclosure describes an optical assembly for a charged particle-optical device configured to project one or more charged particle beams towards a sample, wherein the optical assembly comprises: a charged particle-optical element configured for passage of the one or more charged particle beams; detector element for detecting charged particles emitted from the sample in relation to the one or more charged particle beams; an optical element configured to project optical radiation towards the sample, wherein the optical element is configured to be positioned between the charged particle-optical element and the detector element and is further configured to be directly attached by adhesive to the charged particle-optical element or the detector element.

An assembly and a method for obtaining a target material ingot for use in a radiation source are disclosed. The assembly comprises a sealable chamber, a heating unit, and a receptacle. The chamber is configured to receive a target material catch bucket of a radiation source. The heating unit is configured to heat the target material contained within the received target material catch bucket to at least a melting temperature of a target material. The receptacle comprises at least one mould cavity arranged to receive a portion of a melted target material from the received target material catch bucket, and the receptacle having a contact surface defining the at least one mould cavity, wherein the contact surface is made of mould material that is inert and/or non-wetting against the target material.

Systems and methods for inspection, including analyzing layout data related to a sample to determine connectivity between features on the sample; determining that inspection should be performed on a first feature and a second feature based on the determined connectivity, the inspection comprising comparing a grey level value (GLV) of the first feature to a GLV of the second feature using a voltage contrast image of the first and second features; and determining, based on the comparison, whether a defect associated with the first feature and the second feature is present.

The present invention provides a method for determining a set of correction weights to correct data relating to height measurements of a substrate comprising a plurality of fields to be exposed, the method comprising: obtaining height data relating to a plurality of illumination settings of measurement radiation used to perform a measurement, where each illumination setting comprises a different wavelength, polarization, angle of incidence, or any combination thereof; and determining at least one of: a) one or more correction weights to minimize variation of intrafield height data, and/or b) one or more correction weights such that the height data across the plurality of fields is largely equivalent.

Disclosed is a metrology method, comprising: obtaining metrology image data of a structure on a substrate, the metrology image data comprising images acquired at a substrate orientation using a metrology apparatus; obtaining image metadata corresponding to the metrology image data; obtaining a trained parameter of interest inference model, the trained parameter of interest inference model being operable to infer corrected parameter of interest data from images acquired at the substrate orientation and their corresponding image metadata, the corrected parameter of interest data being corrected for metrology apparatus asymmetry error; and using the trained parameter of interest inference model to infer the corrected parameter of interest data from the metrology image data and the corresponding image metadata.

A die carrier for a bonding tool is configured to support a plurality of dies on respective die regions of a support surface of the die carrier. The die regions comprise openings such that supported surfaces of dies supported on the die regions are fluidly communicable with an external environment of the volume defined by the supported surfaces of the dies and the support surface of the die carrier.

An apparatus for a laser-produced plasma radiation source comprises a generally tubular body. A radially inner surface of the generally tubular body is provided with a structure configured such that radiation received by said radially inner surface from a second axial end is at least partially directed back through the second axial end of the generally tubular body. The generally tubular body may comprise inner and outer tubular portions that define a fluid passageway which may be arranged such that an outlet of the fluid passageway directs fluid received at an inlet generally radially outwards from an axis of the generally tubular body. The apparatus may further comprise a collector provided with a concave reflective surface with a central aperture; and the generally tubular body may be disposed in the central aperture of the collector.

Metrology assemblies for measuring a parameter of a substrate, the metrology assembly comprising a photonic crystal surface emitting laser PCSEL configured to output radiation and a photonic integrated circuit PIC. The PCSEL is directly attached to a back surface of the PIC. The metrology assembly is configured to direct the radiation from the PCSEL to the substrate. The PIC has at least one input coupler configured to capture at least some of the radiation after it has interacted with the substrate. A detector configured to receive at least some of the captured radiation from the PIC for measuring the parameter.

A radiation source comprising: an electron source configured to generate pulses of electrons; a laser source configured to generate a laser beam, the laser source and the electron source being arranged such that the pulses of electrons collide with the laser beam at an interaction point to generate output radiation; and an optomechanical component configured for adjusting an angle of incidence between the laser beam and the pulses of electrons at the interaction point.

A method of forming an illumination mode using an illumination system comprising an array of individually controllable reflective elements arranged to direct portions of a radiation beam to desired locations in a pupil plane. The method comprises allocating different reflective elements of the array to direct radiation to different locations in the illumination mode by: determining a desired power spectral density function of radiation directed by the array of reflective elements to the illumination mode, the desired power spectral density function including a cutoff frequency; applying different phases to frequency components of the power spectral density function; transforming the power spectral density function into a spatial domain signal that varies as a function of positions of the reflective elements; and using the spatial domain signal to allocate reflective elements that direct radiation to different locations in the illumination mode.

A modular rack system for distributing electrical input/output (I/O) signals is provided, comprising a I/O interface frame in a housing and structured to receive a plurality of removable I/O signal module units in a specific unit configuration and for distributing electrical I/O signals to and from the removable I/O signal module units. A configuration control module unit is provided for uniquely identifying the removable I/O signal module units received in the specific unit configuration and for distributing the electrical I/O signals to the I/O interface frame and to the removable I/O signal module units based on the specific unit configuration. Accordingly, the modular rack system architecture can be simplified as the I/O interface frame can be configured as standardized platform, with the configuration control module unit being the only customized component in the rack architecture and forming the control center for the intended semiconductor manufacturing process.

A detection system for use in an exposure apparatus comprises at least two radio frequency receivers (ANT) configured to receive signals in the exposure apparatus. The detection system further comprises a signal processing unit (SPU) comprising a software defined radio (SDR) configured to process the received signals. The signal processing unit (SPU) is further configured to determine an occurrence of a discharge of charged particles in the exposure apparatus from the processed signals.

A joining apparatus for joining a first substrate to a second substrate. The apparatus comprising a stage and a support structure. The stage is for holding the first substrate. The support structure for supporting the second substrate. The stage comprises a stage mark and an optical system for projecting an stage mark image.

A computer-implemented method of processing first metrology data of a patterned portion of a substrate patterned using a wafer processing apparatus to generate predicted second metrology data of the, or another corresponding, patterned portion of the substrate, the first metrology data comprising metrology data from a first metrology domain which obtains metrology data using a first metrology process. The method comprises obtaining the first metrology data of the patterned portion of the substrate, and generating predicted second metrology data of the patterned portion of the substrate, or of the corresponding patterned portion of the substrate, based on the output of a first trained diffusion model conditioned on the first metrology data, the predicted second metrology data comprising predicted metrology data from a second metrology domain which obtains metrology data using a second metrology process.

There is provided a protective membrane for an exposure apparatus for semiconductor manufacturing processes, the protective membrane comprising a boron nitride nanotube core (203) and at least one containment layer (103) configured to contain particles (213) released from the core. Also provided is a component of an exposure apparatus for semiconductor manufacturing processes comprising such a protective membrane, as well as an exposure apparatus for semiconductor manufacturing processes comprising such a protective membrane or component. Also described is a method of manufacturing a protective membrane for an exposure apparatus for semiconductor manufacturing processes as well as a method of reconditioning a boron nitride nanotube protective membrane for an exposure apparatus for semiconductor manufacturing processes. Finally, the use of such a protective membrane, component, exposure apparatus or method in a semiconductor manufacturing process or apparatus therefor is also described.

There is provided a protective membrane (16) for an exposure apparatus (LA) for semiconductor manufacturing processes, the protective membrane (16) comprising boron nitride nanotubes. A component (15) of an exposure apparatus (LA) for semiconductor manufacturing processes comprising such protective membrane (16) is also described. Also provided is an exposure apparatus (LA) for semiconductor manufacturing processes comprising such a protective membrane (16) or component (15). Also described is the use of boron nitride nanotubes as a protective layer in semiconductor manufacturing processes or in an apparatus therefor.

A safety mechanism for a patterning device of a lithographic apparatus, the safety mechanism comprising: a support structure configured to secure the patterning device on a support region of the support structure; and a plurality of magnetic elements located outwardly of the support region, wherein the magnetic elements are arranged such that magnetic force between the magnetic elements and complementary magnetic members fixed relative to the patterning device exerts a force on the patterning device towards the support structure.

The present invention provides a potential corrector unit for use in a charged particle beam assessment apparatus 41 for assessing a sample 208. The potential corrector unit comprises a potential corrector 300 configured to influence an electric potential at a peripheral region of a surface of the sample. The potential corrector is disposed upbeam of the sample.

The present invention provides a discharge damage mitigation unit for use in a charged particle beam assessment apparatus for projecting a beam of charged particles towards a sample. The discharge damage mitigation unit is configured for use in a high electric field environment. The discharge damage mitigation unit comprises one or more extension elements configured to receive a discharge from a high electric field element at a different electrical potential in the high electric field environment. Each extension element is arranged outside of a beam path region encompassing a beam path of the beam of charged particles. Each extension element is supported on a component of the charged particle beam assessment apparatus, wherein a distal region of the extension element is configured to protrude from a surface of the component.